Allicdata Part #: | MAGX-000245-014000-ND |
Manufacturer Part#: |
MAGX-000245-014000 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | TRANSISTOR RF 14W GAN |
More Detail: | RF Mosfet HEMT 50V 15mA 2.5GHz 15.2dB 14W |
DataSheet: | MAGX-000245-014000 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | HEMT |
Frequency: | 2.5GHz |
Gain: | 15.2dB |
Voltage - Test: | 50V |
Current Rating: | 800mA |
Noise Figure: | -- |
Current - Test: | 15mA |
Power - Output: | 14W |
Voltage - Rated: | 65V |
Package / Case: | -- |
Supplier Device Package: | -- |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
MAGX-000245-014000 is a FET (Field effect transistor) also known as MOSFET (Metal oxide semiconductor FET), an RF (Radio Frequency) switch. The device operates at a wide effective control voltage range allowing it to be used in a various types of electronic applications. It is usually used in analog and digital integrated circuits.
How It Works
A field effect transistor consists of three layers – the source, the gate and the drain. The source and the drain are connected by a channel, which is made of semiconductor material. When a voltage is applied to the gate terminal, a small electric field is created around it. This causes the channel to become electrically active, allowing electrons to flow freely. This is known as the transistor\'s "on" state.
When the voltage applied to the gate is removed, the electric field dissipates and the semiconductor channel is no longer conductive, preventing electron flow. This is the transistor\'s "off" state. This simple principle allows a single control voltage to turn the device on and off.
Applications
The MAGX-000245-014000 is mainly used for switching analog and digital signals, including RF signals. It is often used in applications such as RF switches, amplifiers and audio circuits, as well as in low-noise and power amplifiers. Its wide effective control voltage range makes it suitable for use in many different types of integrated circuits. Additionally, its low power consumption and leakage current make it ideal for battery-powered applications.
Advantages
The main advantages of using the MAGX-000245-014000 are its wide control voltage range, low power consumption and high level of reliability. The device is small in size and has low capacitance, reducing the amount of noise generated in applications where it is used. Additionally, it is tolerant of higher than normal voltages, making it resilient in applications exposed to voltage spikes.
Conclusion
The MAGX-000245-014000 is a FET (field-effect transistor) designed for RF (radio frequency) applications. It has a wide control voltage range, allowing it to be used in many different types of electronic circuits. It features low power consumption and leakage, making it ideal for use in battery-powered devices. Additionally, it is highly reliable and resistant to higher than normal voltages, making it suitable for applications that are exposed to voltage spikes. Overall, it is a versatile device suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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