Allicdata Part #: | 1465-1474-ND |
Manufacturer Part#: |
MAGX-001214-650L00 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | TRANSISTOR GAN 650W 1.2-1.4GHZ |
More Detail: | RF Mosfet HEMT 50V 500mA 1.2GHz ~ 1.4GHz 19.5dB 50... |
DataSheet: | MAGX-001214-650L00 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | HEMT |
Frequency: | 1.2GHz ~ 1.4GHz |
Gain: | 19.5dB |
Voltage - Test: | 50V |
Current Rating: | 27A |
Noise Figure: | -- |
Current - Test: | 500mA |
Power - Output: | 500W |
Voltage - Rated: | 65V |
Package / Case: | -- |
Supplier Device Package: | -- |
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The MAGX-001214-650L00 is a Radio Frequency (RF) Field Effect Transistor (FET). FETs are transistors that use an electric field to control the electrical current flow between two electrodes, as opposed to a regular transistor which uses a electric current to control the current flow between two electrodes. The MAGX-001214-650L00 has two main parts, the Source, and the Gate.The Source is the gate in which electrons flow from and the Gate is the electric field which controls the flow of electrons.
TheMAGX-001214-650L00’s application field includes radio and microwave frequency amplifiers, filters and mixers, as well as RF circuits in a range of electronic and communication products. The MAGX-001214-650L00 is capable of operating in temperatures up to 175°C, which makes it well suitable for temperature-prone applications.
The working principle of the MAGX-001214-650L00 is based on the effect of the electric field on the electric current. When the voltage is applied to the Gate and the Source, an electric field is generated in the channel, which is the gap between the two electrodes. The channel is filled with mobile electrons and holes, or electronic charge carriers. As the electric field varies, the electrons and holes are pushed around and become attracted to the gates, thus affecting the current flow between the two electrodes.
The MAGX-001214-650L00 is capable of operating with high linearity, making it ideal for linear applications. It is also high frequency resilient and able to operate between 0.01GHz and 3.8GHz, providing a wide frequency range of application possibilities. The MAGX-001214-650L00 also has resistance to temperature variation, which ensures consistent performance over a wide temperature range.
In conclusion, the MAGX-001214-650L00 is a Radio Frequency Field Effect Transistor (FET) designed for a range of radio, microwave and RF applications. It works based on the effect of an electric field on the current flowing between two electrodes and is capable of high linearity and high frequency resilience. The MAGX-001214-650L00 is also resistant to temperature variation, ensuring it can operate reliably over a wide temperature range.
The specific data is subject to PDF, and the above content is for reference
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