MAGX-000912-650L0S

Introduction

MAGX-000912-650L0S is a High Voltage N-Channel Enhancement-Mode MOSFET that is extensively used in RF and microwave applications. It is offered in a 2×2mm 8-pin surface mount package with a low profile of 0.90mm. The device offers a very low RDS(on) of 1.2Ω, fast switching speeds and the best power-on characteristics compared to other types of MOSFETs.

Application Field

The MAGX-000912-650L0S is an ideal component for high frequency and low voltage applications like RF switching and PA (Power Amplifier) applications. This device can also be used in linear voltage regulator circuit designs, as its low output gate resistance provides excellent line and load regulation. The device runs on a Vgs of -50V, which is higher than most standard MOSFETs, making it ideal for switching applications that require a higher voltage rating.

Working Principle

The working principle of the MAGX-000912-650L0S is based on the metal-oxide-semiconductor field-effect transistor (MOSFET) technology. It has an insulated gate that allows electrons to flow from source to drain. When the gate voltage is applied, an electric field enables the current to flow between source and drain via the semiconductor channel formed between the source and the drain. This is also called an enhancement-mode. The main advantage of this technology is the low inputgate capacitance, allowing it to further be powered with high-frequency signals. This makes it ideal for switching and PA applications.

Conclusion

In conclusion, MAGX-000912-650L0S is an efficient and cost-effective MOSFET that is ideal for high frequency and low voltage applications like RF switching and PA (Power Amplifier) applications. It is designed using the MOSFET technology that enables it to offer low inputgate capacitance and high voltage rating. Its low output gate resistance also allows it to be used in linear voltage regulator circuit designs, making it suitable for a variety of applications.