MAGX-003135-120L00 Discrete Semiconductor Products

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The MAGX-003135-120L00 is a unique type of transistor that belongs to the family of field effect transistors (FETs), more specifically, a metal oxide semiconductor FET (MOSFET) that is designed for radio frequency (RF) operation. This type of transistor is commonly used in radio communication and control circuits.

In terms of its construction, the MAGX-003135-120L00 is a three-terminal device consisting of two terminals labeled as the gate (G) and the drain (D), and one terminal labeled as the source (S). It is typically built on an insulating substrate – usually silicon – with two opposing faces called the source region and the drain region. At the intersection of these two regions is a thin region of depleted semiconductor material called the channel, with the gate terminal being situated close by.

The working principle of the MAGX-003135-120L00 is based on an electrostatic field being applied to the gate terminal. This electrostatic field affects the conductivity of the channel between the source and drain. In simple terms, when the electrostatic field is off, then the current flow between the source and drain will be at a minimum, and when the electrostatic field is on, then the current flow between the source and drain will be at a maximum.

The main application area of the MAGX-003135-120L00 is in radio communication and control circuits. Thanks to its unique construction – short channel, high electrostatic field – it has very fast switching speeds and can be used in a wide variety of applications. Examples of such applications include RF transmitter/receiver amplifiers and attenuators, antenna switching circuits, oscillators, and control logic circuits.

In addition to its usage in communication and control circuits, the MAGX-003135-120L00 can also be used in analog and digital circuitry, in particular for its high frequency response in operating frequencies ranging from 10 MHz to 12 GHz. It is also suitable for most moderate power applications, with its power rating of 120 watts.

When it comes to safety, the MAGX-003135-120L00 transistor is both robust and reliable. Its short channel allows for heat dissipation to be very efficient, while its insulated gate terminal enables it to be highly resistant to shock, vibration, and extreme temperatures. Plus, with its high drain-source breakdown voltage (BVDSS) of 600 volts, it is guaranteed to provide reliable switch control for many years.

In conclusion, the MAGX-003135-120L00 is an RF MOSFET transistor that is designed for use in radio communication and control circuits. Thanks to its unique construction and unique characteristics, it is a reliable and robust component that can be used in a wide range of applications, providing reliable functionality and consistent performance.

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