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MAGX-000035-01000S Application Field and Working Principle

The MAGX-000035-01000S is a monolithic N-Channel Enhancement Mode Field Effect Transistor (FET) from the MAGX-000 family, specifically designed for use at Radio Frequency (RF) applications. Having an unusually high Drain-Source breakdown voltage of 35V, this FET has been mainly engineered to handle large current swings in the order of one thousand Amperes.

Utility and Aplicability

Because of its extremely high voltage gate-source threshold levels, the MAGX-000035-01000S is mainly used in high current switching applications like in radio transmitters working at frequencies up to 3GHz. This FET can also be used as an amplifier in low-noise applications due to its very low-noise performance.

In other applications where the control circuit needs to be isolated from the rest of the circuitry due to safety or noise contraints, the MAGX-000035-01000S can be used as a buffer stage, allowing a very low-pressure control circuit to control a high-current demanding stage.

Working Principle

This FET uses the concept of \'punch-through\', which is the ability of the device to handle a very large current when biased in linear mode. This is achieved by increasing the gate-source voltage Vgs, which causes the majority carriers (electron) in the channel to drift towards the drain side, inducing an inversion layer. This layer can act like a linear amplifier, allowing much larger currents to flow through the transistor.

At higher gate-source voltages, the electron can punch through the gate oxide layer and cause a large increase in the channel current density. This phenomenon is known as punch through, and can be used to switch large currents on and off.

Conclusion

The MAGX-000035-01000S is an N-Channel Enhancement Mode FET specifically designed for use at RF applications, with a very high Drain-Source breakdown voltage. This FET can be used in high-current switching applications, as an amplifier in low-noise applications, and as a buffer in applications where the control circuit needs to be isolated.

This FET is capable to deliver large currents due to its punch-through phenomenon, but has to be used at high gate-source voltages.

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