MAGX-001214-500L0S Discrete Semiconductor Products |
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Allicdata Part #: | 1465-1089-ND |
Manufacturer Part#: |
MAGX-001214-500L0S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | TRANSISTOR GAN 500W 1.2-1.4GHZ |
More Detail: | RF Mosfet HEMT 50V 400mA 1.2GHz ~ 1.4GHz 19.22dB 5... |
DataSheet: | MAGX-001214-500L0S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | HEMT |
Frequency: | 1.2GHz ~ 1.4GHz |
Gain: | 19.22dB |
Voltage - Test: | 50V |
Current Rating: | 18.1A |
Noise Figure: | -- |
Current - Test: | 400mA |
Power - Output: | 500W |
Voltage - Rated: | 65V |
Package / Case: | -- |
Supplier Device Package: | -- |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MAGX-001214-500L0S is a field-effect transistor (FET) device specifically designed for Radio Frequency (RF) applications. This transistor uses a metal oxide semiconductor FET (MOSFET) as the basic operating element. It is manufactured using advanced semiconductor process technology, allowing it to achieve high performance, low power consumption, and excellent reliability.
MOSFETs work by creating a channel between source and drain. This channel acts as the switch which controls the flow of current between these two terminals. The primary components of a MOSFET are the gate, which is the controller of the switch, and the source, which is the terminal connected to the drain.
The MAGX-001214-500L0S is a voltage-controlled device that operates using the gate voltage. When the voltage applied to the gate is equal to or higher than the threshold voltage, the device will be “on” and a conduction channel will be formed between the source and drain. This allows current to flow between source and drain, thus controlling the signal. The resulting current is determined by the magnitude of the gate signal, which can be adjusted to achieve different output power levels.
The MAGX-001214-500L0S is ideal for applications requiring high power and linear operation, such as RF amplifiers and oscillators. It offers the advantage of being able to maintain the linearity of RF signal transmission regardless of the power level. Additionally, the use of an MOSFET makes it more reliable and efficient than conventional silicon transistors, as it allows for better temperature stability, power efficiency, and greater operating speeds.
The MAGX-001214-500L0S is suitable for a wide range of applications, including automotive, industrial, military, and communications. It is particularly useful for systems using communications devices that require low power levels and high linearity, such as digital TV receivers, broadband communications systems, and FM radio systems. It is also suitable for measuring and instrumentation devices requiring high performance and power efficiency.
The MAGX-001214-500L0S is an excellent choice for RF applications, offering high power and linear operation, low power consumption, and excellent reliability. It is easy to integrate into existing systems and offers superior performance in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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