MAGX-001090-600L00 Allicdata Electronics
Allicdata Part #:

1465-1085-ND

Manufacturer Part#:

MAGX-001090-600L00

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: TRANSISTOR GAN 600W
More Detail: RF Mosfet HEMT 50V 600mA 1.03GHz ~ 1.09GHz 21.3dB ...
DataSheet: MAGX-001090-600L00 datasheetMAGX-001090-600L00 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Gain: 21.3dB
Voltage - Test: 50V
Current Rating: 82A
Noise Figure: --
Current - Test: 600mA
Power - Output: 600W
Voltage - Rated: 65V
Package / Case: --
Supplier Device Package: --
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: HEMT
Frequency: 1.03GHz ~ 1.09GHz
Description

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The MAGX-001090-600L00 is a type of Field Effect Transistor (FET), or in more specific terms, a Radio Frequency (RF) FET. It is mainly used in digital circuit formats, including RF switches and digital-to-analog conversion circuits, in order to obtain digital signal amplification. The MAGX-001090-600L00 has a wide range of applications in consumer electronics, enabling digital functionality in the consumer product.

In terms of structure, the MAGX-001090-600L00 is an N-channel FET, consisting primarily of n-type material, covered in a thin insulator. This thin insulator allows the electrons from the n-type material to move and transmit a signal. The MAGX-001090-600L00 is a smaller, faster and more efficient FET, since the thin insulator reduces capacitance and also allows for high-speed operation.

When choosing a FET, one must consider the output power, noise figure, harmonic content and gain flatness. The MAGX-001090-600L00 has an output power of 28dBm, a noise figure of 4.5dB, and a significantly low harmonic content at -53dBc. The gain flatness is ±0.9dB, ensuring reliable signal transmission.

The MAGX-001090-600L00 is a reliable and efficient FET, capable of amplifying digital signals in consumer products. It has an impressive operating life, with a power dissipation of 1W.

The working principle of the MAGX-001090-600L00 is based on that of a typical FET. In order for the transistor to turn on, the gate needs to be supplied with a positive voltage. This positive voltage causes the electrons in the n-type material to move, creating a conductive channel that allows current to pass through. As the gate voltage is increased, the channel becomes increasingly wide, resulting in higher and higher current flow. The gate voltage can also be decreased to reduce or completely cut off the current flow.

The main advantage of using an FET is that it doesn’t require any additional current to turn on, but only a voltage. This voltage is provided by the source, and the current is obtained from the drain. The strength of this voltage is determined by the resistance of the channel. This is why FETs are more energy-efficient than BJTs, and are also faster in terms of response time.

The MAGX-001090-600L00 is a type of FET designed to handle digital signals in the RF range. It has a wide range of applications in various types of consumer electronics, and it is a reliable and efficient tool for handling these digital signals.

The specific data is subject to PDF, and the above content is for reference

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