MAGX-000035-01500S

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The MAGX-000035-01500S is used in a wide array of circuit applications and is particularly well-suited for high frequency signal operations. This specific MOSFET-type transistor is intended for use in radio-frequency (RF) applications, with its low parasitic capacitance and very high breakdown voltage making it extremely reliable when dealing with modulation or signal modulation in higher frequencies.

Purpose and Application

The MAGX-000035-01500S is a field effect transistor (FET) that is typically used as a switching device in RF circuits. This device can be employed in a range of applications, such as high speed digital circuits, analog amplifiers, phase shifters and variable impedance devices. This type of transistor is also employed in radio frequency communication equipment, particularly in systems that involve multiple inputs and outputs.

The MAGX-000035-01500S is also used in amplifier applications, where it provides very low noise figures and is quite stable. It is often used in very sensitive and low-noise amplifier circuits, such as those used in scientific and broadcast electronics. Furthermore, due to its high power handling capabilities, it can be used for power amplifier applications, even when heavy loading occurs.

Working Principle

MOSFETs, such as the MAGX-000035-01500S, are voltage-controlled devices that work on the principle of capacitive charge transfer. The MOSFET combines an insulated gate with a source and a drain, which, when a voltage is applied, creates an electric field across the gate oxide that modulates the number of charge carriers (electrons and holes) issued from the source. This, in turn, controls the transfer of power between the source and the drain.

One of the advantages of using the MAGX-000035-01500S is that it has a high voltage gain and can easily accept input voltages up to 20 volts. This transistor also has a low gate capacity that results in low switching times and very low insertion loss. The insertion loss is the amount of power lost in the process of passing from the input to the output. The low capacitance also has the advantage of preventing crosstalk interference and reducing noise. This makes it an excellent transistor to use in high-frequency communication equipment.

Conclusion

In conclusion, the MAGX-000035-01500S is a highly reliable and efficient MOSFET transistor that is well-suited for radio-frequency applications. Its low parasitic capacitance, very high breakdown voltage and low insertion loss make it a versatile transistor that can be widely employed in many circuitry applications. It is particularly useful as a switching device in high-frequency communication equipment and can be used for amplifier and power applications.

The specific data is subject to PDF, and the above content is for reference