MAGX-000035-010000

The MAGX-000035-010000 is a type of radio frequency and power transistor made with a MOSFET and FET structure. This transistor can broaden the application field of UHF frequency radio communication and achieves high power efficiency for radio power amplifying applications. The device is a good choice for many radio applications related to high efficiency, such as microwave radars, mobile communication, and digital receivers.

Application Field

Radio Frequency (RF): The MAGX-000035-010000 is used in various RF applications such as base station amplifiers, wideband receivers, and communication power amplifiers.The device is suitable for all kinds of RF amplifiers, including VHF and UHF amplifiers, maintaining high linearity and efficiency.

Power Amplifiers: The device can achieve high power efficiency under high frequency. It is capable of achieving wide bandwidth and good linearity, making it suitable for many power amplifying applications.

Working Principle

The MAGX-000035-010000 is designed with a MOSFET and FET structure, both of which have their own working principles. The FET works by controlling the electric field and applies a voltage to control the current in the channel. The MOSFET works by controlling the gate current and applies a voltage to control the inversion layer. This device can reach a high impedance level and reduce noise, making it suitable for high frequency power amplifying applications.

The device has a high breakdown voltage of 900V, which makes it suitable for applications that require high voltage power supplies. It also supports wide frequency range (from MHz to GHz) and high output power, allowing it to perform well in a variety of power amplifying applications.

In addition, the MAGX-000035-010000\'s structure allows it to maintain a high level of stability when operating in a wide temperature range. It is also capable of operating at high efficiency, allowing it to achieve better performance while consuming less power.

Conclusion

The MAGX-000035-010000 is an ideal for for radio frequency and power amplifying applications. It is designed with a MOSFET and FET structure, which enables it to maintain high impedance and reduce noise for high frequency applications. It also has a high breakdown voltage of 900V, a wide frequency range (from MHz to GHz), and supports high output power. In addition, the device is capable of maintaining a high level of stability in a wide temperature range and can operate at high efficiency.