Allicdata Part #: | 1465-1077-ND |
Manufacturer Part#: |
MAGX-000035-01500P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | FET RF 65V 3.5GHZ 14DFN |
More Detail: | RF Mosfet HEMT 50V 35mA 3.5GHz 14dB 14W 14-DFN (3x... |
DataSheet: | MAGX-000035-01500P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | HEMT |
Frequency: | 3.5GHz |
Gain: | 14dB |
Voltage - Test: | 50V |
Current Rating: | 1mA |
Noise Figure: | -- |
Current - Test: | 35mA |
Power - Output: | 14W |
Voltage - Rated: | 65V |
Package / Case: | 14-VDFN Exposed Pad |
Supplier Device Package: | 14-DFN (3x6) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MAGX-000035-01500P is a transistor from the family of field effect transistors (FETs). It is a radio frequency (RF) metal oxide silicon field effect transistor (MOSFET).
Field effect transistors (FETs) are a three-terminal electronic device. They operate on the principle that the current flow can be modulated using an electric field in a semiconductor material. MOSFETs are the most common type of FET and are used in a range of applications such as power electronics, amplifier circuits and switching circuits. MAGX-000035-01500P is a MOSFET designed for use as a power amplifier in RF applications.
The key feature of a MOSFET is the gate terminal. It is an insulated gate between the source and drain, which controls the current flow. The gate terminal is connected to a voltage, which is used to modulate the current flow between source and drain.
The MAGX-000035-01500P has a drain current rating up to 1.5A and a drain-source voltage up to 150V. The gate-source voltage is 3V and the power dissipation is 2W.
The device is suitable for applications such as power amplifiers, RF power amplifiers, RF switches, RF power transistors and RF amplifier circuits. It is particularly suited to applications where high power and reliability are required.
The MAGX-000035-01500P has a low on-state resistance which improves efficiency and allows for a higher slew rate. It also has a low input capacitance which minimizes power losses and enables higher switching speeds. The device is also highly reliable and has low power losses due to the low gate threshold voltage and gate oxide layer thickness.
The device is highly efficient, making it suitable for applications where power consumption is a critical factor, such as portable and battery operated electronic devices. It also has a very low noise figure, making it suitable for use in applications such as medical equipment, radar systems and communications systems.
In summary, the MAGX-000035-01500P is an RF MOSFET designed for use as a power amplifier in RF applications. It has an excellent performance, high efficiency and low noise figure. It is suitable for a range of applications where high power and reliability are required.
The specific data is subject to PDF, and the above content is for reference
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