MAGX-001214-500L00 Allicdata Electronics
Allicdata Part #:

1465-1088-ND

Manufacturer Part#:

MAGX-001214-500L00

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: TRANSISTOR GAN 500W 1.2-1.4GHZ
More Detail: RF Mosfet HEMT 50V 400mA 1.2GHz ~ 1.4GHz 19.22dB 5...
DataSheet: MAGX-001214-500L00 datasheetMAGX-001214-500L00 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: HEMT
Frequency: 1.2GHz ~ 1.4GHz
Gain: 19.22dB
Voltage - Test: 50V
Current Rating: 18.1A
Noise Figure: --
Current - Test: 400mA
Power - Output: 500W
Voltage - Rated: 65V
Package / Case: --
Supplier Device Package: --
Description

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MAGX-001214-500L00 is a device used in electronics circuits. It belongs to the category of transistors, and specifically to the group of Field Effect Transistors (FET) and Metal Oxide Semiconductor Field Effect Transistors (MOSFET) used in radio frequency (RF) applications. The device is very useful in many kinds of electrical and electronic circuitry, particularly in portable electronic devices and radio-communication systems.

The MAGX-001214-500L00 is a MOSFET-type device, which means it contains several components including a three-terminal source, a three-terminal drain, and a control gate. The source and drain terminals can be used to connect different devices, while the control gate can be used to turn the device “on” or “off.” This type of device is called an active device, because it can be used to amplify signals or switch power, depending on how one applies a signal to the control gate.

The MAGX-001214-500L00 has a wide range of applications in RF electronic circuits. This includes its use as an oscillator, an amplifier, a filter, or a voltage regulator. It can also be used in RF power transistors, high frequency switching circuits, and other types of RF circuits.

The device is well-suited for use in power systems and noise suppression circuits. It is also quite suitable for use in low-noise amplifiers, as it has very low harmonic distortion, good linearity, and high output power. Additionally, it has very good frequency-selectivity properties, and can be used to design circuits that are resilient to interference.

The working principle of the MAGX-001214-500L00 is quite simple. Basically, when a common source current is applied to the control gate, the transistor effectively amplifies the input signal applied to it. This means that a low signal applied to the control gate could be effectively amplified when it reaches the output terminals of the device. The device can also be used in reverse-mode, so that a high signal applied to the gate can result in a low signal at the drain.

The MAGX-001214-500L00 is a very useful device for any electronics engineer, as it can be used in a wide range of applications. It is particularly useful in applications where high frequency switching, high power, and low noise are required. It is also very useful in low-frequency and RF applications.

The specific data is subject to PDF, and the above content is for reference

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