MAGX-0110087 Discrete Semiconductor Products

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MAGX-0110087 is a field effect transistor (FET) designed for use in radio frequency (RF) applications. It offers enhanced performance over other FETs due to its increased lead-to-source capacitance, wider output impedance range, and improved noise immunity. It is an n-channel enhancement-mode device, meaning a positive gate voltage is required to turn it on. When the gate voltage is applied, a channel between the source and the drain opens up and current starts flowing. This current is proportional to the gate voltage and the source-to-drain voltage. As the source-to-drain voltage is increased, the FET reaches its saturation region and operates at its peak performance.The MAGX-0110087 is designed with a low-resistance channel to improve efficiency. This reduces the amount of waste heat dissipation and allows the device to run at a higher level of efficiency. In addition, its wide frequency range makes it ideal for a variety of RF applications. Its improved noise immunity and output impedance also make it more suitable for use in high-end RF applications.The MAGX-0110087 has several advantages over other FETs, such as its increased lead-to-source capacitance and wider output impedance range. This makes it an ideal choice for a variety of RF applications, from low-end to high-end. In addition, its improved efficiency and improved noise immunity make it a great choice for high-end RF applications. The MAGX-0110087 is an advanced FET designed to meet the needs of modern RF applications and provide superior performance.

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Part Number	Manufacturer	Price	Quantity	Description