Allicdata Part #: | MMBF170DITR-ND |
Manufacturer Part#: |
MMBF170-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 500MA SOT23-3 |
More Detail: | N-Channel 60V 500mA (Ta) 300mW (Ta) Surface Mount ... |
DataSheet: | MMBF170-7 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 40pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 300mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The MMBF170-7 is a type of single field effect transistor, more commonly known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a three-terminal component that uses a channel formed between the source and drain terminals to regulate the conduction of current through the channel. The MMBF170-7 offers good ON/OFF switching characteristics, with high blocking voltage capability and low gate-charge. These features make the transistor the perfect device for power control applications.
MMBF170-7 Applications
The MMBF170-7 is mainly used in low-voltage, low-power applications such as DC-DC converters, current-monitoring circuits, power-supply monitoring, and battery-management systems. It can also be used as an analog switch in audio amplifiers. Due to its low on-resistance drop and high blocking voltage, it is an ideal device for low-voltage motor control and switching applications.
MMBF170-7 Working Principle
The MMBF170-7 employs a metal oxide semiconductor (MOS) field-effect-transistor (FET) architecture, which is composed of source, drain, and gate terminals. It is a unipolar, voltage-controlled device, meaning that the current flow through it is controlled by the applied voltage across the gate and source terminals. When no voltage is applied, the MOSFET is in an OFF state, meaning that no current will pass through it, as the gate terminal is not connected to any voltage source. However, when a voltage is applied, an electric field builds up between the gate and the source terminals, which "opens up" the MOSFET, allowing current to flow through it, with the magnitude of the current determined by the voltage applied, resistance of the device, and other physical parameters.
The MMBF170-7 also has a very low "on-resistance" drop, which means that it only consumes a small amount of power (as compared to other FETs) when it is in the "ON" state. This low power consumption makes the MMBF170-7 distinguishable, as it can be used in applications that require low power dissipation. Additionally, thanks to its high blocking voltage capability, it can be used in applications that require switching of high-voltage signals.
Conclusion
The MMBF170-7 is an incredibly useful type of single field effect transistor. Its low on-resistance drop and high blocking voltage make it perfect for a variety of low-power power control applications, from DC-DC converters to current-monitoring circuits and motor control applications. Additionally, it has a very low power consumption rate, making it a cost-effective, energy-efficient choice for a wide range of low-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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