Allicdata Part #: | MMBFV170LT3G-ND |
Manufacturer Part#: |
MMBFV170LT3G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 0.5A SOT23 |
More Detail: | MOSFET N-CH 60V 0.5A SOT23 |
DataSheet: | MMBFV170LT3G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.03854 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 (TO-236) |
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The MMBFV170LT3G is a N-Channel Enhancement Mode Field-Effect Transistor (FET). This type of FET can be used in many electronic circuits, such as power supplies, switch mode power supplies, switching networks, inverters and other devices. This FET is designed for low-current, high-frequency applications such as RF communications.
The MMBFV170LT3G consists of three pins, with one gate, one source, and one drain. The gate of the FET is used to control the flow of current between the source and the drain. It has an efficient thermal management system that dissipates the heat generated by its operation, ensuring that the transistor remains in its normal operating temperature range.
The MMBFV170LT3G has an excellent low voltage and high temperature performance, making it suitable for applications such as switch mode power supplies and switching networks. This FET also has a high input impedance, allowing it to be used as an attenuator or impedance isolator. It can also be used as a voltage follower or for feedback control.
The MMBFV170LT3G is a fast switching FET, which means it can operate at high frequencies with minimal conduction losses. This is especially important for applications that require a fast response time such as switching networks and inverters. It also has a low input capacitance, allowing it to be used in digital applications such as buffers and converters.
In terms of its working principle, the MMBFV170LT3G utilizes the current flow through its metal-oxide semiconductor (MOS) gate to control the current flow between its source and drain. By controlling the voltage applied to its gate, the FET can be made to switch on or off, allowing the amount of current to pass through it to be regulated. This makes the MMBFV170LT3G an ideal device for regulating the current flow in switching networks, power supplies, inverters, and other applications.
The MMBFV170LT3G is a reliable low-current, high-frequency FET that is well-suited for a wide range of applications, from digital circuits and switching networks to power supplies and inverters. It has a high input impedance, low input capacitance, and fast switching operation, allowing it to be used in many different types of electronic circuits.
The specific data is subject to PDF, and the above content is for reference
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