MMBF5485_NB50012

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The MMBF5485_NB50012 is a N-Channel depletion mode MOS Field-Effect Transistor (DMOS FET) designed for use in Radio-Frequency (RF) applications. As a general-purpose transistor, it can be used in a variety of functions such as frequency shifting, gain controlling, or switching, and operates over a frequency spectrum of 800MHz to 3000MHz. The transistor has an operating voltage of 5.0 V and a maximum drain current of 125 mA with an on-resistance of 6.6 ohm. The MMBF5485_NB50012 also offers a low gate capacitance of 15 fF and a maximum thermal resistance rating of 250°C/W.

The MMBF5485_NB50012 is composed of four elements—a gate wire connected directly to the semiconductor layer (source), a source wire running parallel to the gate wire, a drain wire running between the source wire and the semiconductor layer, and a channel between the source and drain. The transistor works by having an electric field created between the gate and the source wire. This electric field modulates the path of current between the source and the drain, controlling the amount of current flowing through the channel. By controlling this current, the MMBF5485_NB50012 can be used to amplify, switch, or mix RF signals.

The MMBF5485_NB50012 is primarily used in Radio Frequency applications, where it can be used for switching, gain controlling, frequency shifting etc. It offers a maximum operating frequency of 3000MHz with an operating voltage of 5.0 V, enabling it to be used in a broad range of applications. Additionally, its low gate capacitance of 15 fF and its thermal resistance rating of 250°C/W ensure that it can handle high frequency signals with minimal power loss.

In conclusion, the MMBF5485_NB50012 is an ideal RF transistor for switching, frequency shifting, and gain controlling applications, offering a high frequency rating with low power loss. Thanks to its high operating voltage and low gate capacitance, the transistor can be used in a wide range of applications. The MMBF5485_NB50012\'s thermal resistance rating of 250°C/W ensures that it can handle high frequency signals without overheating.

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