MMBFJ201 Discrete Semiconductor Products |
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Allicdata Part #: | MMBFJ201TR-ND |
Manufacturer Part#: |
MMBFJ201 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 40V 350MW SOT23 |
More Detail: | JFET N-Channel 40V 350mW Surface Mount SOT-23-3 |
DataSheet: | MMBFJ201 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 200µA @ 20V |
Voltage - Cutoff (VGS off) @ Id: | 300mV @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 350mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MBFJ201 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MMBFJ201 Transitors, also known as JFETs, are semiconductor devices that are both energy-efficient and capable of high-speed operation. These devices provide a low-voltage operating point and allow for low-power dissipations and low-cost designs. They are widely used in applications such as automotive, medical, computing and scientific applications.
A JFET transistor typically has two terminals: the gate, which is connected to a voltage source and controls the operation of the device, and the drain, which is connected to the load. The current that flows through a JFET is controlled by the gate-drain voltage, which is applied between the gate and drain terminals. When a voltage is applied to the gate, the current flowing through the device is regulated by adjusting the gate-drain voltage.
The working principle of MMBFJ201 transistors is similar to other FET transistors. A channel of lightly doped semiconductor material connects the drain and source terminals, and the gate terminal is insulated from the channel. When the gate is positively biased, electrons are attracted to the gate, creating a barrier in the channel that restricts current flowing through it. When the gate is negatively biased, the electrons are repelled from the gate, creating a low impedance path for current to flow through.
The MMBFJ201 transistors are typically used in applications where low voltages and low-power dissipation are required. They are used in a variety of high frequency switching and amplifying circuits, such as converters and audio amplifiers. In addition, they are used in power control circuits to reduce power dissipation in the connected circuitry and in high-speed logic circuits where their large gate capacitance provides high switching speed.
One of the advantages of the MMBFJ201 transistors is their ability to operate under high operating temperature. The low gate-to-drain capacitance allows them to operate at higher frequencies and temperatures than is possible with other FETs, making them ideal for applications that require fast response or short circuit protection.
In addition to these advantages, MMBFJ201 transistors also have several other features that improve the performance of circuits designed with these transistors. For example, the increase in current gain when the gate-to-drain voltage is raised, the low operating temperature, and the low gate-to-drain capacitance, which improves reliability and minimizes power consumption.
The MMBFJ201 transistors are widely used for a variety of applications, including switching and amplifying circuits in the automotive, medical and computing industry, as well as in power control circuits and high-speed logic circuits. Due to their low-voltage operating point, relatively low-power dissipation and low-cost designs, these transistors are a popular choice for modern applications.
The specific data is subject to PDF, and the above content is for reference
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