Allicdata Part #: | MMBF2202PT1OSCT-ND |
Manufacturer Part#: |
MMBF2202PT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 0.3A SOT-323 |
More Detail: | P-Channel 20V 300mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | MMBF2202PT1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.2 Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.7nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 5V |
FET Feature: | -- |
Power Dissipation (Max): | 150mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SC-70-3 (SOT323) |
Package / Case: | SC-70, SOT-323 |
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The MMBF2202PT1 is a transistor made of metal–oxide–semiconductor field-effect transistor (MOSFET) material. It is classified as a single MOSFET due to its construction, which consists of a single source, drain and gate electrode. The MMBF2202PT1 is typically used for applications such as power switching, voltage regulation, logic level switching and various types of amplification.
At the heart of the MMBF2202PT1 is the metal–oxide–semiconductor construction. This type of transistor uses a varying voltage or gate signal to control the current flow between a source electrode and a drain electrode. The gate electrode is placed between the source and the drain and controls the flow of current between the two by presenting either a positive voltage or negative voltage. When a positive voltage is placed between the gate and the source, current can flow from the source to the drain. When a negative voltage is placed between the gate and the source, current is blocked from flowing from the source to the drain.
The MMBF2202PT1 is designed to operate in two major switching regions. The first is known as the "linear or ohmic region" which is characterized by a linear relationship between the gate voltage and the drain current. The second region is known as the "saturation region" which is characterized by a constant drain current regardless of the gate voltage. When the device is operating in the linear region, it behaves as an amplifier since its output current is proportional to the input signal. When operating in saturation mode, the device becomes a switch since it will turn the current completely off once the gate voltage reaches the blocking voltage.
The MMBF2202PT1 can also be used in a variety of different applications. In power switch mode, the device can be used to control the flow of current within a power circuit. This is done by using the linear region of the MMBF2202PT1 to regulate the current within the circuit. In voltage regulation mode, the MMBF2202PT1 can be used to turn the current off or on within a circuit depending on the voltage of the gate signal. When operating in logic level mode, the MMBF2202PT1 can act as a logic 1 or logic 0 depending on the voltage of the gate signal, in this way it can be used as an input or output control device in logic circuits. Finally, the MMBF2202PT1 can also be used in various amplifier circuits to control the current flow of the circuit and to amplify an incoming signal.
In conclusion, the MMBF2202PT1 is a single MOSFET device with a variety of applications. It can be used in power switching, voltage regulation, logic level switching and various types of amplification. The MMBF2202PT1 operates in either a linear or ohmic region or a saturation region depending on the voltage of the gate signal.
The specific data is subject to PDF, and the above content is for reference
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