MMUN2113LT1 Allicdata Electronics
Allicdata Part #:

MMUN2113LT1OSCT-ND

Manufacturer Part#:

MMUN2113LT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 246MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: MMUN2113LT1 datasheetMMUN2113LT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 246mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMUN21**L
Series: --
Packaging: Cut Tape (CT) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Description

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A MMUN2113LT1 is a NPN Bipolar Junction Transistor (BJT) designed for use in automotive, industrial, and consumer applications. It has a single base collector structure, meaning it has three terminals, one for the base, one for the collector, and one for the emitter. It is pre-biased, meaning the DC current gain is constant over the operating temperature range, and the transistor gain is positive over the full temperature range. This ensures a constant performance regardless of temperature changes.

The MMUN2113LT1 is mainly used in audio and power amplifier stages, where its pre-biased operating characteristics make it well suited to boost the performance of the circuit. It is a low-noise device, providing greater stability and better performance than devices which require an external bias network. It has a high current gain over a wide base current range, which allows it to output higher currents than transistor models which require a bias network. Additionally, it has a low power dissipation, which reduces the need for thermal management and helps keep energy costs down.

The MMUN2113LT1 is designed to operate with a wide input voltage range and feature wide temperature capability, which makes them suitable for use in a variety of environments. The device also has a wide frequency response, allowing for higher operating frequencies. Moreover, it has a high input impedance, which makes it suitable for use in voltage-controlled applications. Additionally, it offers configurability options such as TO-220, TO-263 and SO-8 packages.

In terms of the MMUN2113LT1\'s working principle, it is a current-controlled device. When a positive potential is applied to the base/emitter junction, a fraction of the current (“base current”) is drawn through, and the resulting potential is fed back to the base/collector junction. This causes the collector to become charged and form a current-controlled current source, which allows the transistor to amplify current signals. As a result, the MMUN2113LT1 is commonly used in amplifier circuits and motor control circuit modules.

Overall, the MMUN2113LT1 is an excellent single, pre-biased transistor with a wide range of applications in various fields. Its pre-biased operating characteristics, low power dissipation, wide voltage range, and broad frequency response enable it to be used in a variety of applications such as audio amplifiers, motor control circuits, and voltage-controlled applications. Additionally, its current gain allows it to output higher currents than other transistors, making it a highly versatile device.

The specific data is subject to PDF, and the above content is for reference

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