Allicdata Part #: | MMUN2113LT1OSCT-ND |
Manufacturer Part#: |
MMUN2113LT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 246MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | MMUN2113LT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 246mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMUN21**L |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
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A MMUN2113LT1 is a NPN Bipolar Junction Transistor (BJT) designed for use in automotive, industrial, and consumer applications. It has a single base collector structure, meaning it has three terminals, one for the base, one for the collector, and one for the emitter. It is pre-biased, meaning the DC current gain is constant over the operating temperature range, and the transistor gain is positive over the full temperature range. This ensures a constant performance regardless of temperature changes.
The MMUN2113LT1 is mainly used in audio and power amplifier stages, where its pre-biased operating characteristics make it well suited to boost the performance of the circuit. It is a low-noise device, providing greater stability and better performance than devices which require an external bias network. It has a high current gain over a wide base current range, which allows it to output higher currents than transistor models which require a bias network. Additionally, it has a low power dissipation, which reduces the need for thermal management and helps keep energy costs down.
The MMUN2113LT1 is designed to operate with a wide input voltage range and feature wide temperature capability, which makes them suitable for use in a variety of environments. The device also has a wide frequency response, allowing for higher operating frequencies. Moreover, it has a high input impedance, which makes it suitable for use in voltage-controlled applications. Additionally, it offers configurability options such as TO-220, TO-263 and SO-8 packages.
In terms of the MMUN2113LT1\'s working principle, it is a current-controlled device. When a positive potential is applied to the base/emitter junction, a fraction of the current (“base current”) is drawn through, and the resulting potential is fed back to the base/collector junction. This causes the collector to become charged and form a current-controlled current source, which allows the transistor to amplify current signals. As a result, the MMUN2113LT1 is commonly used in amplifier circuits and motor control circuit modules.
Overall, the MMUN2113LT1 is an excellent single, pre-biased transistor with a wide range of applications in various fields. Its pre-biased operating characteristics, low power dissipation, wide voltage range, and broad frequency response enable it to be used in a variety of applications such as audio amplifiers, motor control circuits, and voltage-controlled applications. Additionally, its current gain allows it to output higher currents than other transistors, making it a highly versatile device.
The specific data is subject to PDF, and the above content is for reference
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