MMUN2216LT1

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The MMUN2216LT1 single-bipolar, pre-biased transistor is a small signal transistor used for a variety of general-purpose purposes. This small signal transistor is intended for operation in general-purpose digital and analog applications. It is one of the most widely used transistors, built on an NPN bipolar configuration, with an emitter base junction that is pre-biased. It is ideal for applications that require low power dissipation, noise, and distortion with maximum operating temperature of 150 degrees Celsius.

Key features

• Wide range of current gain (hFE) over a wide range of collector-emitter voltage.
• Well controlled current gain and low VCE(sat) values.
• Low BV ( CEO ) breakdown voltage which ensures stability and reduced switching loss.
• Low noise performance.
• High frequency response.
• High current carrying capacity.
• Easy to install and cost effective.

Applications

The MMUN2216LT1 pre-biased NPN transistor is widely used in applications that require low voltage operation and low power dissipation. Its wide range of current gain allows it to be used to build amplifiers, filters, triggers, switching circuits and voltage regulators, as well as digital circuit designs such as computers and communication equipment.

This transistor is also used in industrial and automotive applications where it transistors may be used in circuits. It is also used in opto-electronics applications where power conservation and reliability are of utmost importance.

This transistor is also well suited for applications that require high frequency response, such as radio and television transmission. It can be used to build logic circuits as it can be easily switched between two different states. Additionally, it can be used to build interface circuits, analog circuits, and other circuitry needed for data storage, VoIP applications, and audio equipment.

Working Principle

The MMUN2216LT1 transistor operates on the principle of a transistor, which is a semiconductor device made up of two different conductivity types placed together. The electrical current flows from the positively charged region to the negatively charged region. The two regions are the emitter and collector.

The pre-biased emitter base junction helps to provide a Base-Emitter voltage that can easily be adjusted, depending on the requirements of the application. This allows the collector-emitter voltage to be set to an appropriate value that ensures the transistor is working as intended.

This transistor has a high current gain (hFE). This allows it to have low minimum and maximum current gains, ensuring that the current flows smoothly and evenly through the transistor. An external resistor can be connected to the transistor to increase the current gain when necessary.

The MMUN2216LT1 transistor also has low power dissipation, allowing it to be used in a wide variety of applications. Additionally, it has low noise performance, allowing it to be used in applications that require a low noise level.

Overall, the MMUN2216LT1 pre-biased NPN transistor is a reliable, versatile and cost effective option for a variety of applications. Its wide range of current gain, low noise performance and excellent temperature performance make it the ideal choice for a range of applications.

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