MRF555

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Bipolar junction transistors (BJTs) have long been used to amplify electronics signals in a variety of RF applications. The MRF555 is a special application-specific BJT and is often referred to as a "RF amplifier" because of its ability to generate high voltage, large current gains with high RF power output. The MRF555 is a high-performance RF power transistor specially designed to operate in the a frequency range 590 MHz to 2650 MHz. With its advanced design, low thermal resistance and large output power, the MRF555 is ideally suited for a wide range of applications. It is also ideal for use in mobile radio applications such as base stations, portable radios, and terminal transceivers.

The MRF555 is designed using a common-emitter configuration and has low power dissipation of 1W at the operating frequency of 900 MHz. It can operate in three different modes: Class A, Class B, and Class AB. Class A operation is the most commonly used and is suitable for low frequency applications such as AM radio, where large gain is needed. Class B operation is suitable for high frequency applications such as FM radio, where linearity and power efficiency are more important. Class AB is used in applications where a combination of both Class A and Class B performances are desired.

The MRF555 has a high current gain and a large output power. By combining its high power output, low thermal resistance and advanced design, the MRF555 is able to provide a high level of efficiency. In addition, its large collector-emitter voltage rating of 28 V ensures that it is able to tolerate high voltages. This makes it suitable for use in a variety of RF applications. The MRF555 is designed with a low cut-off frequency, low thermal resistance and large output power for efficient RF amplification. By using an advanced design, it is able to offer excellent performance, efficiency and stability. The MRF555 also has a wide operating frequency range to accommodate different applications. Additionally, its large collector-emitter voltage rating of 28V allows it to offer superior reliability in high voltage applications. Overall, the MRF555 is an excellent and highly reliable RF transistor for a variety of RF-based applications. With its advanced design and low thermal resistance, the MRF555 is capable of providing large gains with high power output and excellent reliability. By offering a wide operating frequency range and large collector-emitter voltage rating, the MRF555 is able to offer superior performance and stability.

The specific data is subject to PDF, and the above content is for reference