MRF5P21240HR6

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	2.11GHz ~ 2.17GHz
Gain:	13dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	2.2A
Power - Output:	52W
Voltage - Rated:	65V
Package / Case:	NI-1230
Supplier Device Package:	NI-1230

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Introduction to MRF5P21240HR6

The MRF5P21240HR6 is a High Frequency (RF) power MOSFET Transistor designed primarily for military, industrial, and commercial applications operating within the range of 5.8 to 6.2 GHz. This transistor is a MOS (Metal Oxide Semiconductor) type field effect transistor having many advantages over a traditional bipolar transistor such as smaller size, greater power efficiency, better temperature stability, and much higher switching speeds.

Applications of MRF5P21240HR6

The MRF5P21240HR6 is designed for use in systems operating in the 5.8 to 6.2GHz range. It can be used in digital deferential links, RF amplifiers and oscillators, amplifiers with low noise levels, digital mixers and modulators, high gain amplifiers, transmitters and receivers, and radar systems. It is also used in other high frequency applications requiring high power output, including satellite communications systems and communications networks.

Working Principle of MRF5P21240HR6

The MRF5P21240HR6 MOSFET transistors work on the principle of current being controllable due to the existence of the electric field created by the electric charge in the gate region of the transistor. The electric field, when allowed to pass through the transistor’s channel, acts on the source and drain, polarizing them and thus controlling the current flow between the source and drain. When a voltage is applied to the gate, the electrons in the gate region will be attracted and hence create an inversion layer along the transistor channel, thus allowing a current to be conducted from source to drain.The MRF5P21240HR6 transistors have a drain-to-source breakdown voltage of 75 V, meaning that the can handle voltages up to 75 V. They also have a maximum current rating of 11 A and a power dissipation of 250 W. It is also noted that these transistors have a good thermal and electrical stability, making them suitable for use in applications that require uneven power dissipation demands.

Conclusion

The MRF5P21240HR6 MOSFET transistors are designed for high frequency applications with high power requirements and are excellent for complex digital and RF applications such as digital DEF (Deferential) links, RF amplifiers and oscillators, and digital mixers and modulators. They can handle extremely high voltages up to 75 V, and have good thermal and electric stability with a maximum power dissipation of 250 W. These transistors can be reliably used in applications requiring good performance and where power dissipation demands may vary.

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