MRF5S19100HSR5 Allicdata Electronics
Allicdata Part #:

MRF5S19100HSR5-ND

Manufacturer Part#:

MRF5S19100HSR5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 65V 1.99GHZ NI-780S
More Detail: RF Mosfet LDMOS 28V 1A 1.93GHz ~ 1.99GHz 13.9dB 22...
DataSheet: MRF5S19100HSR5 datasheetMRF5S19100HSR5 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 1.93GHz ~ 1.99GHz
Gain: 13.9dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 1A
Power - Output: 22W
Voltage - Rated: 65V
Package / Case: NI-780S
Supplier Device Package: NI-780S
Base Part Number: MRF5S19100
Description

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The MRF5S19100HSR5 is a high power silicon N-channel transistor from the popular MRF5S family of RF transistors. It is designed for use in 40 W cellular telephone amplifiers operating at frequencies up to 900 MHz. It\'s able to deliver up to a maximum of 40 W at frequencies up to 900 MHz within its design range. This makes it very attractive for use in UHF, VHF and satellite transmission systems.

The MRF5S19100HSR5 is based on an advanced transistors-FETs, MOSFETs- RF design and is made of a silicon N-channel offering good features such as low losses, high efficiency, low noise, and better linearity. Additionally, it offers a high power gain, allowing it to offer reliable and stable operation.

The MRF5S19100HSR5 comes in a 4-lead, surface-mount plastic package. This package is ideal for surface-mount applications, and its small size allows for a low profile of the component in the circuit.

The operating principle of the MRF5S19100HSR5 is based on the use of a voltage difference between the source and the drain of the necessary for current flow, thus producing a resulting field effect which amplifies the incoming signal. This voltage difference is developed across a metal-oxide-semiconductor gate which utilizes an insulated-gate bipolar transistor (IGBT) to control the current flow into the drain.

The MRF5S19100HSR5 can be used in many different applications, including cellular telephones and cellular base stations, UHF, VHF and satellite transmission systems, two-way radios and other high power consumer and professional devices. In all these applications, the MRF5S19100HSR5 provides reliable, high power operation and is notably quieter than other transistors-FETs, MOSFETs- RF with similar features.

In conclusion, the MRF5S19100HSR5 is a highly reliable, high power transistor-FETs, MOSFETs- RF from the popular MRF5S family. It is ideal for use in applications such as cellular telephones and cellular base stations, UHF, VHF and satellite transmission systems, two-way radios and other high power consumer and professional devices. It\'s able to deliver up to a maximum of 40 W of continuous output power at frequencies up to 900 MHz within its design range, making it very well suited to many applications where reliable and high performance are essential.

The specific data is subject to PDF, and the above content is for reference

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