MRF5S4140HSR3

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The MRF5S4140HSR3 is a high-power, high-efficiency, field-effect transistor (FET) optimized for the high frequencies associated with radio frequency (RF) applications, from 0.1 to 4 GHz. It is a high-voltage, high-power, high-reliability, gallium arsenide, pseudomorphic, high electron mobility transistor (HEMT). It is designed to meet the stringent requirements of space, aircraft, and military radios as well as other applications.

The MRF5S4140HSR3 is an enhancement type, medium voltage FET, with a drain-source second breakdown voltage of 30 V and power dissipation of 10 Watts. The transistor has a nominal gain of 10 dB, an average noise figure of 0.53 dB, and a third order intercept point of 30 dBm. It also has an impressive input and output return loss of 19 dB. The transistor is offered in a standard three-lead JEDEC designed package.

The MRF5S4140HSR3 is also offered in two other versions -- the HSR2 and HSR3 -- with drain-source breakdown voltages of 18 and 28 V, respectively. In addition, it is available in a leadless ceramic package.

The working principle of the MRF5S4140HSR3 is based on the native electron mobility increase which occurs when a small electric field is applied across the semiconductor material. The electric field reduces the potential barrier in the channel of the device, allowing the electrons to move faster. This increases the current flow through the device, resulting in increased power and frequency.

As the RF signal passes through the device, the electrons in the channel move faster, producing an additional amplification effect. As a result, the MRF5S4140HSR3 offers improved linearity, dynamic range and flatness. The device is also able to handle high frequencies better than conventional transistors.

The most typical application of the MRF5S4140HSR3 is in radio-frequency amplifiers, especially those operating in the 1 MHz to 4 GHz range. It can be used in feed-forward amplifiers, power amplifiers and high-performance linear amplifiers. In addition, the MRF5S4140HSR3 is used in high-speed data converters, in receivers for cordless telephones and in receivers for satellite systems.

The MRF5S4140HSR3 is an ideal choice for high-frequency applications such as wireless communications and radio-frequency identification systems. It also offers excellent thermal management capabilities with its thermally optimised ceramic packages, making it suitable for a wide range of applications that require high-power operation in a reliably cooled environment.

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