Allicdata Part #: | MRF5812GR1TR-ND |
Manufacturer Part#: |
MRF5812GR1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 15V 200MA 8-SOIC |
More Detail: | RF Transistor NPN 15V 200mA 5GHz 1.25W Surface Mou... |
DataSheet: | MRF5812GR1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 5GHz |
Noise Figure (dB Typ @ f): | 2dB ~ 3dB @ 500MHz |
Gain: | 13dB ~ 15.5dB |
Power - Max: | 1.25W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 50mA, 5V |
Current - Collector (Ic) (Max): | 200mA |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | MRF5812 |
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The MRF5812GR1 is a type of bipolar junction transistor (BJT) specifically designed for Radio Frequency (RF) applications. This RF transistor is manufactured by Motorola and helps to improve the signal strength and improve efficiency across a range of frequency bands, making it ideal for a wide range of commercial radio and television transmission applications.
The MRF5812GR1 operates with a maximum junction temperature of 175°C, a maximum collector current of 10A and a maximum power dissipation of 150W. This high performing transistor has a maximum frequency of 500MHz and is housed in a surface mount configuration. The MRF5812GR1 is designed to provide superior gain and power efficiency. It also offers excellent linearity, providing the best modulation characteristics for wireless applications that require a higher performance device.
The transistor\'s working principle is based on the basic idea of current amplification of the input signal. When the small input current is applied to the base (B) of the transistor, it will be multiplied much higher at the collector (C) as the output current. This current amplification or gain is measured in terms of the transistor\'s Beta (β) value. In this case, the specified Beta value of the MRF5812GR1 is 300.
The MRF5812GR1 is mainly used in radio frequency (RF) applications, such as amplifiers, oscillators, mixers and modulators, as the high input impedance and high current capability make it ideal for these purposes. Its high gain and power efficiency make it an ideal choice for both linear and nonlinear operations in low-noise signal processing applications. It is also suitable for telecommunications, public address systems and other high-frequency signal transmission applications.
The MRF5812GR1 is also used in high frequency power amplifiers for a wide range of radio and television broadcasting and cellular applications. Its wide voltage and temperature range allows it to operate in both high power and low power applications. Its superior linearity and high gain performance make it suitable for digital TV broadcasting and other digital signal processing applications.
The MRF5812GR1 is a perfect choice for a range of RF applications due to its high gain, wide-band operation and low-cost. It is easy to use, and with its high power efficiency and excellent linearity, it is sure to be a reliable choice for any high frequency or radio transmission project.
The specific data is subject to PDF, and the above content is for reference
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