MRF586

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	17V
Frequency - Transition:	3GHz
Noise Figure (dB Typ @ f):	--
Gain:	13.5dB
Power - Max:	1W
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 50mA, 5V
Current - Collector (Ic) (Max):	200mA
Operating Temperature:	--
Mounting Type:	Through Hole
Package / Case:	TO-205AD, TO-39-3 Metal Can
Supplier Device Package:	TO-39
Base Part Number:	--

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MRF586 Application Field and Working PrincipleThe MRF586 is an NPN silicon transistor commonly used in radio frequency (RF) devices. This particular device can operate in the 10.15~10.6 GHz frequency range and provide output power of up to 30 watts. It is used in various communications devices, such as television signal amplifiers, mobile radios, and microwave power amplifiers.The MRF586 is a wideband device and its maximum operating frequency is considerably higher than that of conventional transistors. The device is designed to achieve high gain and wide bandwidth, which makes it suitable for applications like linear power amplifiers, large signal amplifiers for microwave applications, and wideband amplifier designs.The MRF586 is a bipolar junction transistor (BJT). A BJT is formed by three semiconductor layers, forming a p-n-p or n-p-n structure. The MRF586 has an n-p-n configuration. The other two layers form the base and the collector regions. When current passes through the base region, it enters the collector region and passes onto the emitter region. This produces a current gain (hFE) which can range from 6 at 0.5A collector current to 200 at 20mA collector current.The emitters of the MRF586 are connected to the ground source and its output is taken between the collector and emitter. This allows the transistor to be used in common emitter configuration amplifiers. The base connection of the device is then used to control the current flow through the transistor.To properly structure the bandwidth and gain of the MRF586, a large number of small signal RF components must be used. These components include resistors, capacitors and inductors. They can be included either externally on the device or included externally on the circuit board.The MRF586 transistor has two applications in radio frequency communications systems. In a common emitter configuration, an amplifier or oscillator can be designed with the transistor. Alternatively, the transistor can be used in a frequency multipliers or detector circuit.In amplifiers, the MRF586 can be used to achieve linear gain. The device has high gain, low distortion, and a wide bandwidth. These characteristics make the MRF586 suitable for use in amplifiers for radio and microwave applications.In frequency multipliers, the MRF586 can be used to achieve high frequency signals. The device is built with high RF breakdown voltages and integrated frequency multipliers that allow the output signal to be multiplied with an input signal. This results in devices with higher frequency output signals than the input signal.The MRF586 can also be used in detector circuits. In these circuits, the transistor acts as a diode and can detect the RF signal and output a DC voltage. The output DC voltage can be used to control other circuits or devices.In conclusion, the MRF586 is a highly versatile bipolar junction transistor for radio frequency (RF) and microwave operation. This transistor can be used in a variety of applications, and is suitable for amplifiers, frequency multipliers, and detector circuits. The device has a wide bandwidth, high gain and low distortion, which makes it ideal for RF and microwave applications.

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