MRF5S4140HR3 Allicdata Electronics
Allicdata Part #:

MRF5S4140HR3-ND

Manufacturer Part#:

MRF5S4140HR3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 65V 465MHZ NI-780
More Detail: RF Mosfet LDMOS 28V 1.25A 465MHz 21dB 28W NI-780
DataSheet: MRF5S4140HR3 datasheetMRF5S4140HR3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 465MHz
Gain: 21dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 1.25A
Power - Output: 28W
Voltage - Rated: 65V
Package / Case: NI-780
Supplier Device Package: NI-780
Base Part Number: MRF5S4140
Description

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The MRF5S4140HR3 application field and working principle has been a topic of discussion in the transistor industry for some time. The MRF5S4140HR3 is a discrete radio frequency (RF) power mosfet packaged in a dual common-cathode configuration that is designed for BFET systems. It is a two-terminal device with two separate carriers of charge - the majority and minority carriers. By controlling the gate-source voltage, the current flow between the source and drain regions can be modulated.

The MRF5S4140HR3 is primarily used in WiMAX and WLAN base stations and handsets. Although it is a low-power device, its dual common-cathode configuration design allows it to switch on and off relatively quickly, making it ideal for high-speed switch and circuit applications. In addition, its extreme low on-state resistance gives engineers more control when they are optimizing current flow and power utilization.

The working principle of the MRF5S4140HR3 is based on field-effect transistor (FET) technology. FETs are three-terminal devices that are typically grouped into two categories: junction FETs (JFETs) and metal-oxide-semiconductor FETs (MOSFETs). MOSFETs are the most important type of FETs and are widely used in integrated circuits and memory chips. The MRF5S4140HR3 is an N-channel enhancement mode MOSFET and works by the application of a voltage between the gate and the source. This is known as the gate-source voltage (VGS). High VGS reduces the electrical resistance between the source and the drain, allowing current to flow. Low VGS increases the electrical resistance between the source and the drain, reducing current flow.

The MRF5S4140HR3 is a highly reliable device that offers high performance and power efficiency. It has high frequency capability and is well-suited for low-level, high speed switching and linear applications. Its superior high frequency operation is accomplished by the RF decoupling capacitance incorporated into the package, which helps eliminate direct current ripple. In addition, the device’s advanced thermal protection ensures long-term reliability and cooling.

The MRF5S4140HR3 is a low-cost solution for applications requiring high performance and fidelity. It is ideal for wideband and WLAN communications, automotive and consumer electronics, power switching and linear applications, and for high speed logic level control. With its advanced features and discrete package configuration, the MRF5S4140HR3 is a versatile transistor for many applications.

The specific data is subject to PDF, and the above content is for reference

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