MRF5S21150HR5

The MRF5S21150HR5 is a rugged, high power RF MOSFET transistor made by Freescale Semiconductor. It can deliver up to 120 watts of power, and is designed for use in high frequency RF power amplifiers. The MRF5S21150HR5 is suitable for applications such as aircraft radio and radar, cellular infrastructure, and various commercial radio networks.

The MRF5S21150HR5 is a rugged high power RF MOSFET transistor with excellent power efficiency and thermal performance. The device is made from a DMOS process and has a robust 17 dB gain and a 2.2 GHz frequency range. It has a low gate source threshold voltage of only 3.2 volts, making it suitable for use in low voltage applications.

The characteristics of the MRF5S21150HR5 mean it is ideal for use in high power RF power amplifiers, which require high performance, high efficiency and low noise. The MRF5S21150HR5 is rated at 120 watts minimum and can be used in amplifiers with output powers of up to several hundred watts.

The working principle of the MRF5S21150HR5 is based on the principle of MOSFET transistors. It is a four-terminal device, with gates, sources and drains. When a voltage is applied to the gate of the MOSFET, it creates an electric field which causes the channel between the source and drain to open. This allows a current to flow between the source and drain, and thus amplifies the input voltage.

The MRF5S21150HR5 is a popular device for RF power amplifiers, due to its high power rating, upto 120 watts and excellent thermal performance. It is capable of delivering increased RF output powers for extended periods of time, and has a low gate source threshold voltage of only 3.2 volts, making it suitable for a variety of low voltage applications. The device is also robust and reliable and is designed to offer reliable performance in extreme environments.