Allicdata Part #: | MRF553G-ND |
Manufacturer Part#: |
MRF553G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 16V 500MA POWERMACRO |
More Detail: | RF Transistor NPN 16V 500mA 175MHz 3W Surface Moun... |
DataSheet: | MRF553G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 16V |
Frequency - Transition: | 175MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 11dB ~ 13dB |
Power - Max: | 3W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 250mA, 5V |
Current - Collector (Ic) (Max): | 500mA |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | Power Macro |
Supplier Device Package: | Power Macro |
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RF (Radio Frequency) transistors are particular type of signal transistors that are designed to amplify and/or switch signals in the radio frequency region. MRF553G is one such popular RF power transistor designed and manufactured by Motorola. This transistor is designed for a range of amplifiers, pre-amplifiers, and oscillators that operate anywhere between 30 MHz and 250 MHz.
The MRF553G has the maximum power gain at 125 MHz, and is housed in a hermetically sealed, ceramic, dual-in-line, package. It consists of two NPN transistors. The MRF553G comes with a copper-clad alumina ceramic substrate that offers excellent piezoelectric and thermal expansion characteristics.
MRF553G Application Field
The MRF553G RF power transistor can be used for a variety of applications including:
- RF amplifiers
- RF power amplifier
- Broadband and high frequency amplifiers
- Cellular telephone
- Broadcast FM
- CATV systems
- VSAT transceivers
The MRF553G offers excellent gain and power levels at frequencies as low as 30 MHz while maintaining a high level of linearity. This makes it a suitable device for a number of applications such as broadcast FM, cellular telephone, and CATV systems.
MRF553G Working Principle
The MRF553G transistor is an NPN bi-polar type transistor with a bipolar design. It consists two PNP transistors in series. The first transistor is configured in a common-emitter configuration, with the collector and emitter of the first transistor connected to the base and collector respectively of the second transistor. This configuration creates an NPN/PNP feedback path, which acts as an amplifier.
The output current of the first transistor is then amplified by the second transistor, and the amplified output is then fed back to the first transistor. This is the basic working principle of the MRF553G transistor.
In addition to the high gain, the MRF553G transistor also offers excellent input and output matching characteristics, making it suitable for a wide range of applications. Furthermore, it can also handle large signals with low distortion levels, making it suitable for CATV and broadcast FM applications.
The MRF553G transistor is a preferred choice for RF applications due its excellent linearity, high gain, low distortion, and high stability. It is also relatively inexpensive and easy to obtain, making it a popular choice for many RF applications.
The specific data is subject to PDF, and the above content is for reference
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