MRF559

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RF Bipolar Transistor Basics

Bipolar transistors are three-terminal devices that are used for a myriad of applications, including radio-frequency (RF) amplification, switching, and oscillation. RF bipolar transistors are designed to deliver high gain and efficiency at RF frequencies, typically from 10 MHz to several GHz. This article will provide an introduction to the MRF559 bipolar transistor and discuss its application field and working principle.

RF Transistor Basics

A bipolar transistor consists of three elements: emitter, collector, and base. The emitter is the injection port of injected carriers, while the collector is the drain of those injected carriers. The base controls the current flow between the emitter and the collector. When the base is forward biased, like a PNP transistor, current will flow from the emitter to the collector. When the base is reverse biased, like an NPN transistor, current will flow in the opposite direction.

MRF559 Application Field and Working Principle

The MRF559 is an RF bipolar transistor designed for operation in frequency bands from 100 MHz to 500 MHz. It is a high power device designed to deliver 500 milliwatts of output power, with a gain of 14 dB. The device’s high voltage and low current handling capability makes it suitable for use in a variety of switching and amplifier circuits.

The MRF559 is a NPN RF bipolar transistor that operates using a common-base configuration. It has three terminals: emitter, collector, and base. The emitter is forward biased and injects electrons into the base. These electrons are then amplified by the transistor’s action and are collected by the collector.

The MRF559’s high voltage design allows it to be used in a wide range of amplification and switching applications. It is commonly used in RF amplifiers, oscillators, mixers, impedance matching, and DC to RF converters. In addition, it can be used in power amplifiers, low-noise amplifiers, and voltage-controlled oscillators.

Conclusion

The MRF559 is a high power, high voltage RF bipolar transistor suitable for a variety of RF amplification and switching applications. It features low noise and high gain at RF frequencies of up to 500 MHz, and its design makes it an ideal device for a variety of amplifier and oscillator circuits.

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