MRF5S21150HR3

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MRF5S21150HR3 is a mature and reliable MOSFET designed for RF (Radio Frequency) application. It has outstanding power and high linearity performance both in CW and pulsed modes. This product is ideal for wireless base station applications and provides the best combination of power, linearity and efficiency.

As an N-Channel enhancement mode MOSFET, this RF MOSFET, the MRF5S21150HR3, is designed for Class AB linear amplification applications, operating from 500 MHz to 2700 MHz. It features a minimized spread in gain, high power of 21 W in a 3-pin package, low on-resistance, high efficiency and low distortion, making it ideal for Wi-Fi, GPS, mobile, etc.

This RF MOSFET is developed around the exacting process technology and is available in EU, USA and Asia. The device is RoHS compliant for global applications and made in an approved assembly fab facility. The availability of the MRF5S21150HR3 in a variety of frequencies from 500 MHz to 2700 MHz is an added advantage while designing the most diverse applications.

MRF5S21150HR3 is mainly intended for demanding high linearity and high power applications. Engineers select it using several criteria, such as RF performance, power output, product lifetime, etc., to decide on the most suitable devices. The main advantage here is that this device packs power, linearity and efficiency on a single chip, thereby saving the costs and complexity of designing.

Working principle of this RF MOSFET is as follows. It is controlled by a gate terminal which is related to the voltage applied on it. When the gate voltage is zero, the leakage current is high, and the drain current is low. The drain current will start to increase when the voltage on the gate terminal reaches the threshold voltage and the transistor turns on. When the gate voltage is increased further beyond the threshold voltage, the drain current will increase linearly with further increases in gate voltage. This linear increase in drain current is known as the linear region of operation, and it is in this region where the gain of the transistor is at its highest.

The RF performance of the transistor is mainly determined by three different parasitic elements: the switching losses, the gate resistance, and the source inductance. The switching losses are determined by the time it takes for the transistor to turn on and off, while the gate resistance is determined by the width and length of the gate track. The source inductance is determined by the distance between the source and the gate and the capacitance between these two nodes. These parasitic elements affect the RF performance of the transistor, and thus must be minimized in order to get better overall performance.

In summary, MRF5S21150HR3 is a mature and reliable N-Channel MOSFET which performs reliably over the whole frequency range from 500 MHz to 2700 MHz. It has remarkable power and high linearity performance both in CW and pulsed modes, leading to its popular use in wireless base station applications. Moreover, its power, linearity and efficiency all achieved on a single chip make the MRF5S21150HR3 an ideal choice for engineers for designing a wide range of applications.

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