MRF5S19060NBR1 Discrete Semiconductor Products

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MRF5S19060NBR1 transistors are largely used in the field of radio-frequency equipments, such as mobile phone base station, two-way radio, satellite communication and digital TV broadcasting. It is an enhancement type MOSFET (metal-oxide-semiconductor field effect transistor) designed for RF applictions. They provide high power amplification in the frequency range from 100 MHz to 1200 MHz with an excellent self noise figure and an input signal dynamic range from low frequencies to microwave frequencies.

The working principle of an RF MOSFET is based on the physical properties of semiconductor devices. It is a field effect transistor (FET) which uses a voltage-controlled gate to control the passage of current. The gate is electrically separated from channel so there is no significant current flow between gate and channel. The gate voltage determines the current which passes through the channel of the FET.

In the MRF5S19060NBR1 MOSFET, the FET is packed in a hermetically sealed package and embedded in a special mold material designed to provide excellent thermal resistance and isolation from electromagnetic interference. The FET has three terminals, source, gate and drain, and is operated in the so-called \'enhancement mode\' where the FET is normally off, and the gate voltage has to exceed a given threshold voltage (Vgs) in order to turn it on and allow current flow through it.

The MRF5S19060NBR1 MOSFET has a high linearity and low noise figure over its operating range. It is ideal for applications requiring high gain in the lower frequencies, making it ideal for use in radio-frequency systems that require low noise and high linearity. This MOSFET can handle peak output loads as high as 50 W, making it suitable for applications such as high-power amplifiers, wideband modulators, low-noise mixers and similar applications.

The MRF5S19060NBR1 MOSFET is also used in many other types of RF systems, such as Video and Audio Receiver, Mobile Radio Transceiver, Radio Test Equipment and FM data transmission systems. It can be used in conjunction with other FETs to build power amplifiers for Amateur Radio, Business Radio and Public-Safety applications. It also finds application in Repeater Systems, Broadcast Auxiliary Equipment and more.

The MRF5S19060NBR1 MOSFET is an ideal choice for radio-frequency applications requiring high-power amplification, gain and linearity over a wide frequency range. Its hermetically sealed package, high linearity and low noise figure make it a great choice for applications requiring low-noise, high-performance operation and reliable performance even in harsh environmental conditions.

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