MRF5S21130HR5

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	2.11GHz ~ 2.17GHz
Gain:	13.5dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.2A
Power - Output:	28W
Voltage - Rated:	65V
Package / Case:	NI-880
Supplier Device Package:	NI-880
Base Part Number:	MRF5S21130

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RF metal oxide semiconductor field-effect transistors (RF MOSFETs) are key components used in high-frequency, high-speed device applications. Among them, MRF5S21130HR5 is a self-adaptive enhancement mode RF MOSFET with dual-gate structure, which can provide a wide range of current, low noise and high output power. In this article, we will present the application fields and working principles of MRF5S21130HR5.

• Application Field

MRF5S21130HR5 is often used in wireless communication applications such as cellular and Wi-Fi applications. Additionally, it is also applied in consumer electronics, satellite and wideband communication systems. With its wide range of currents, low noise and high output power, it is also suitable for applications like high-definition television (HDTV), video display devices (DVI) and XGA devices for multimedia applications.

• Working Principle

MRF5S21130HR5 is a self-adaptive enhancement mode RF MOSFET with dual-gate structure. The dual-gate structure consists of two independent gates, the drain gate and the source gate. The two gates are separated by the gateseparator, which is an insulating layer.In operation, an appropriate bias voltage is applied to the source gate using an external bias source. This voltage causes the drain gate to be "stuck" at the lowest possible voltage due to the construction of the two gates. This causes a small current to flow between the two gates, and as more bias is applied, the current will continue to increase. The self-adaptive feature of the MRF5S21130HR5 is enabled when a change in drain-to-source voltage is sensed by the device. When the signal changes, the resistance between the two gates will adjust, resulting in a higher current flow and a better device performance.In the application of the MRF5S21130HR5, the gate insulation layer acts as a shield from external interference, so that unwanted interference and noise is eliminated from the signal. At the same time, it also provides a higher output power for the signal by effectively increasing the current flowing through the device.

• Conclusion

The MRF5S21130HR5 is a dual-gate RF MOSFET with a self-adaptive feature that is suited for wireless communication, consumer electronics and wideband communication applications. It is capable of providing a wide range of current, low noise and high output power, making it an ideal choice for applications such as HDTV and other multimedia applications. The gate insulation layer acts as a shield from external interference, so that unwanted interference and noise is eliminated from the signal.

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