MRF581AG

The MRF581AG is a RF power transistor module produced using NXP Semiconductors’Bipolar Complementary MOS (BiCMOS) process. This process combines the positive attributes of both bipolar and MOS technologies, enabling the MRF581AG to operate in a wide range of applications. The MRF581AG is ideal for use in all kinds of RF applications, including high-efficiency broadband amplifiers, wideband amplifiers, and medium power amplifiers.

The operating temperature range of the MRF581AG is -20°C to +200°C and it is available in a hermetically sealed package. The module includes two series-connected NPN transistors, each with an embedded base-emitter resistance. The transistors are also internally matched for a maximum output power of 500 Watts and a minimum output power of 100 Watts. Furthermore, it has an interstage matching network, which simplifies the design of the RF amplifier.

The MRF581AG is designed to be used in the frequency range from 50 MHz to 750 MHz. It features a high gain of 35 dB or more, linearity of 20 dB or better, and a maximum output power of 500 Watts. This makes it well suited for high power applications such as telecommunications, broadcasting, military and industrial applications. In addition, the MRF581AG can also be used in video and audio amplifiers.

The working principle of the MRF581AG is based on bipolar and MOS technologies. The module includes two amplifiers, which are connected in series. The first amplifier, which functions as the input stage, is a bipolar NPN transistor. This transistor amplifies the input signal, which is then passed to the second stage, which is a MOSFET amplifier. The MOSFET amplifier provides additional gain and improves the linearity and efficiency of the MRF581AG.

The output power of the MRF581AG is determined by the input power, gain and efficiency of the circuit. The gain of the circuit can be controlled by changing the bias current, which adjusts the output power. Additionally, the output power can be also be adjusted by changing the impedance of the input and output matching networks. This helps to maximize efficiency and linearity.

In summary, the MRF581AG is an excellent choice for use in a wide range of applications. It is a high-efficiency, broadband amplifier module, which is perfect for use in a variety of RF applications. It features a wide operating temperature range, a high gain and excellent linearity, making it suitable for high power applications. Furthermore, its series connected amplifiers and matching networks make it easy to design the RF amplifier.