MRF6P24190HR5

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The RF MOSFET MRF6P24190HR5 is a high power transistor with a maximum output power of 190 watts (typical). It is a N-channel MOSFET with a maximum drain-source voltage (BVDSS) of 28 volts, a drain current (ID) of 8 amperes and a maximum gate-source voltage (VGS) of +20 volts. Its features also include a low drain-source on-resistance, extremely low gate charge, low capacitance and high frequency operation.

The MRF6P24190HR5 is widely used in many applications such as RF power amplifiers, radio base station and mobile communication applications. It is also suitable for high frequency switching applications, low dropout regulator and class D audio amplifiers.

The working principle of the MRF6P24190HR5 is based on the electro-static theory of capacitance. When a positive voltage is applied to the gate terminal, the electric field increases between the gate and the drain due to the charge of the gate, attracting holes to the source region. This results in a decrease in the source-drain resistance, allowing for an increase in current flow. Conversely, when a negative voltage is applied to the gate, the electric field between the gate and the drain decreases, resulting in an increase in the source-drain resistance so as to decrease the current flow .

In summary, the RF MOSFET MRF6P24190HR5 is an ideal device for high power applications requiring high efficiency and low drain-source on-resistance. It is suitable for applications such as high power amplifiers, radio base station and mobile communication applications, low dropout regulator and class D audio amplifiers. It gets its functionality from the electro-static theory of capacitance, by applying a positive or negative voltage to its gate terminal to increase or decrease the source-drain resistance respectively.

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