MRF6S19100HR5

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The MRF6S19100HR5 is a single-ended common source N-channel depletion mode vertical DMOS transistor intended for RF power amplifiers in Industrial, Scientific and Medical (ISM) along with similar radio frequency (RF) applciations. Originally developed by Motorola, the MRF6S19100HR5 is now a type of transistor that can be used for first and second harmonic rejection of ISM RF power amplifiers. It is also suitable for use in RF power generating applications in the amateur radio range.

Types of RF Transistors

There are two common types of RF transistors; Bipolar Transistors (BJTs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). The MRF6S19100HR5 is a type of vertical MOSFET, or VMOS. VMOS transistors are devices with a vertical gate and drain, surrounded by a single large metal plate. They are designed to have a low power consumption and high efficiency. The MRF6S19100HR5 is an N-channel VMOS and is suitable for RF power generating applications in the amateur radio range, and more.

Working Principle of MOSFETs

Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) work on the principle of a MOS capacitor, which is a semiconductor device with two metal plates and a layer of insulating material between them. When the voltage is applied, the metal plates attract opposite charges from the insulating material. This allows the metal plates to form a type of capacitor, which can be used to control the flow of electricity. MOSFETs use this same principle in order to control the conductivity of a given semiconductor material in order to generate specific current and voltage levels.

Field of Applications

The MRF6S19100HR5 is suitable for use in ISM-like radio frequency (RF) applications, such as for first and second harmonic rejection of ISM RF power amplifiers. It is also suitable for use in RF power generating applications in the amateur radio range, such as in cellular base stations, radio and TV broadcast receivers, linear and switching power supplies, radio frequency power control and RF power amplifiers. Additionally, the MRF6S19100HR5 can be used in any type of RF power application that requires power generation over wide temperature and frequency ranges, such as in motor control, industrial or residential applications, or any other application that involves generating high power levels.

Conclusion

The MRF6S19100HR5 is an N-channel depletion mode vertical DMOS transistor intended for first and second harmonic rejection of ISM RF power amplifiers. It is also suitable for use in RF power generating applications in the amateur radio range, providing high temperatures and wide frequency range operation. The device is suitable for use in a wide variety of application fields, such as radio and TV broadcast receivers, cellular base stations, linear and switching power supplies, radio frequency power control and RF power amplifiers. The company’s suite of supporting tools ensures the MRF6S19100HR5 is an ideal RF power generating device.

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