MRF6V2010NBR1

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The MRF6V2010NBR1 is a high-gain, high-power N-Channel RF transistor and is ideal for most general purpose RF applications. It has been specifically designed and tested for RF power amplifier applications up to 1 GHz.

The transistor is made from a planar double-diffused metal–oxide–semiconductor (DMOS) process, providing high reliability and durability, as well as exceptional linearity and power performance. It features an exceptionally low gate leakage threshold voltage, a low-distortion linear gain, and a flat gain profile.

The transistor is well suited for use in amplifiers, mixers, oscilators, and others. It can be used for AM and FM broadcast, as well as for high-speed data links and other communications applications. It can also be used in various medical, industrial, and military applications. It is rated at 20 Volts, 40 Watts and has a gain of 15 dB. It is housed in a compact, ceramic surface-mount package.

The MRF6V2010NBR1 is designed to handle RF frequencies up to 1 GHz and operates with a drain-source voltage of 20 volts. The transistor has a maximum specific on-state output resistance of 5.6 ohms and a DC current gain of 15 dB. The on-state power dissipation is specified at a max of 40 watts. It is also capable of handling peak currents up to 8 A.

Internally, the MRF6V2010NBR1 uses an entire N-Channel MOSFET cell in order to generate the highest gain, lowest distortion, and maximum power handling capabilities. It utilizes a twin lead, two-channel architecture which allows for higher stability and greater efficiency over all frequencies. The device also includes a built-in gate-source capacitor, which enhances RF stability. The device also includes a self-resonant process, which helps to reduce power dissipation by 50%.

The transistors major benefits over conventional amplifiers include greater power-added efficiency, greater signal gain, low output distortion and temperature stability, as well as greater linearity. In addition, it allows for the use of high voltages and high power delivery, allowing for higher speed data transfer. All this combined makes the MRF6V2010NBR1 the ideal choice for a range of RF applications.

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