MRF6S19060MR1

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The MRF6S19060MR1 is a ultra-broadband and high power SiC-based MOSFET developed by Freescale Semiconductor. It is designed to be used in applications that require high electrical efficiency, system reliability and flexibility. It is a perfect fit for applications that require high frequency and high power, such as commercial and industrial radios, radar systems, cellular infrastructure, automotive systems and aerospace applications. This device is also suitable for applications that require efficient operation at low frequencies, for example, audio amplifiers and industrial automation systems.

The MRF6S19060MR1 is a high power, high frequency metal–oxide–semiconductor field-effect transistor (MOSFET). The device consists of multiple MOSFETs connected in series and parallel to provide high current gain and impedance matching. It features a wide frequency range and a high breakdown voltage of 900V, enabling it to support a wide range of application needs. The device has a maximum drain current of 20A, a source resistor below 0.4Ω, and off-state leakage current of less than 10 nA, making it suitable for applications requiring high current gains and high power ratings. Furthermore, the device is environmentally friendly and RoHS compliant.

The working principle of the MRF6S19060MR1 is based on simple electric field conduction. In this type of device, electrons are injected into the semiconductor material via an electric field. This electric field causes electrons to create a current in the material, which is then modulated by the gates, allowing device operation. The electric field is generated between the gate and the source by applying an external voltage across them. This allows the electrons to move between the semiconductor material and the gate and produce a current. The gate is also used to modulate the electrons, making the device reversible and allowing it to control the output current. The drain and source regions are used to turn the device off and on and to regulate the current flow.

The MRF6S19060MR1 is an ideal solution for applications that require high electronic efficiency, system reliability and flexibility. It can be used for a wide range of applications such as commercial and industrial radios, cellular infrastructure, radar systems, automotive systems and aerospace applications. Moreover, the device is environmentally friendly and RoHS compliant. With its wide frequency range and high breakdown voltage, it provides an efficient and reliable solution for high power and high frequency applications.

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