Allicdata Part #: | MRF6V2300NBR5TR-ND |
Manufacturer Part#: |
MRF6V2300NBR5 |
Price: | $ 85.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 110V 220MHZ TO-272-4 |
More Detail: | RF Mosfet LDMOS 50V 900mA 220MHz 25.5dB 300W TO-27... |
DataSheet: | MRF6V2300NBR5 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 77.54040 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | LDMOS |
Frequency: | 220MHz |
Gain: | 25.5dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 300W |
Voltage - Rated: | 110V |
Package / Case: | TO-272BB |
Supplier Device Package: | TO-272 WB-4 |
Base Part Number: | MRF6V2300 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MRF6V2300NBR5 is a 6V broadband, high-power field-effect transistor (FET) from Freescale Semiconductor, Inc. It is designed for broadband RF applications between 33 and 1000 MHz. The MRF6V2300NBR5 is a N-channel, enhancement-mode gallium arsenide FET (GaAsFET) device with very low noise figure performance and power gain. The MRF6V2300NBR5 is used in applications such as VHF, UHF, and L Band amplifiers, mixers, active filters, and video modulators. It is also used in cellular base station high-power amplifiers and communications systems.
The working principle of the MRF6V2300NBR5 is similar to that of other FETs and MOSFETs. It consists of a semiconductor channel between two electrodes, known as the source and the drain. When a voltage is applied to the gate, the channel width is altered, allowing electrons to flow between the source and the drain. This change in current between the source and the drain is known as a transistor effect and is the basis for the operation of the FET. By changing the voltage across the gate, the current flow between the source and the drain can be adjusted, allowing for amplification and control of the device.
The MRF6V2300NBR5 is advantageous due to its low-noise performance, power gain, and wide bandwidth. Additionally, it is a rugged device, able to withstand large voltage and power swings. This makes it well suited for uses in tough RF environments, such as mobile and cellular communication systems. The device is also capable of high-frequency operation, with a maximum frequency of 1000 MHz, and has a flexible bias circuitry, allowing for more efficient operation.
The MRF6V2300NBR5 is a versatile device, used in a variety of RF applications. It is a high-power, broadband FET, capable of power gain and low-noise performance. This makes it ideal for use in VHF, UHF, and L Band applications, such as amplifiers, mixers, active filters, and video modulators. It is often used in communication systems and cellular base stations, due to its wide frequency range and rugged design. With these advantages, the MRF6V2300NBR5 is an indispensable part of many RF designs.
The specific data is subject to PDF, and the above content is for reference
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