MRF6V13250HR5

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The MRF6V13250HR5 is a RF power field effect transistor (FET) designed for use in demanding, high power applications. This power FET operates over the 6V to 13.5V DC supply voltage range, and is capable of delivering 250W of peak power, which makes it ideal for high power broadcast applications including AM, FM and television. It is available in a through-hole package, making it easy to mount and use in a wide variety of applications.

The MRF6V13250HR5 is composed of a single Copper PTFE package, which consists of a substrate structure, source and gate contacts, a gate controlled diffused junction, source metallization and a gate oxide capacitor. The purpose of the diffused junction is to provide a low drain-source capacitance, which helps reduce the on-resistance of the device. The devices gate oxide capacitor is used to reduce the voltage drop across the gate-source resistance, allowing for a more linear transfer curve.

The MRF6V13250HR5 utilizes a common gate configuration. This type of configuration allows for the transistor to be operated as either a standard N-channel FET or a enhancement mode FET; this allows for more flexibility in applications. The common gate configuration also offers a high output impedance and low temperature coefficient of gain, which make the device ideal for use in circuits requiring very high gain.

The MRF6V13250HR5 is capable of switching frequencies up to 200MHz and is ideal for use in RF power amplifiers, voltage regulator modules, medical systems, and satellite communication systems. The device is also suitable for use in a number of applications that require high-frequency transmit operations, such as high-definition television and cellular base stations. The device is also well suited for amplifier stages that require high voltage operation, such as amplifiers used in the broadcast industry. The MRF6V13250HR5 offers a number of benefits such as excellent linearity, high efficiency, very low noise, high power output, and excellent thermal stability.

The MRF6V13250HR5 offers excellent performance in applications that require both high power and high-frequency operation. This power FET is capable of providing a power gain of up to 16dB at 200MHz, which makes it ideal for a number of applications. The device also offers excellent linearity at frequencies up to 500MHz, which makes it well suited for many types of high-frequency communications.

In conclusion, the MRF6V13250HR5 is an excellent choice for a wide range of applications, from broadcast to medical systems and satellite communication. This power FET offers excellent performance in demanding applications where high power, high-frequency operation and linearity are required. The device is available in a through-hole package and offers excellent thermal stability, efficiency and excellent linearity at frequencies up to 500MHz, making it ideal for use in a variety of applications.

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