MRF6S23100HR5

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MRF6S23100HR5 is a digital RF power LDMOS transistor designed for HF, VHF and UHF band operations. It is a transconductance transistor (Gm) type device, which means that its transconductance coefficient is superior to that of a voltage amplifier (Va) type MOSFET. This makes the MRF6S23100HR5 ideal for use in frequency division multiple access (FDMA) and other digital communications systems that require a high level of linearity. The device provides a very flat and wide gate-source forward characteristic curve, making it suitable for pulse and pulse-controlled applications such as orthogonal frequency division multiplexing (OFDM).

The MRF6S23100HR5 is a metal–oxide–semiconductor field–effect transistor (MOSFET). It operates in either enhancement or depletion mode, depending on the gate voltage applied to the gate terminal. When forward biased, electrons (the majority carriers) flow from the source to the drain, forming an n-channel. Reverse biasing the gate results in an inversion layer of electrons, creating a p-channel. The gate voltage controls the number of carriers in the channel, providing current conduction.

This device has an output power capability of 100W in the HF, VHF and UHF bands. It is available in an industry-standard SOT-227 package. The device has built-in protection for the gate terminal, which ensures excellent thermal stability and reliability. The device also has an output power controller, which adjusts the transistor’s drain-source voltages based on the input power level. The protection provided by the power controller prevents overdriving of the transistor and ensures stable operation.

The MRF6S23100HR5 has a very high gain but low noise figure, making it ideal for linear applications. It is also capable of operating at high temperature, which makes it well suited for high temperature applications such as in-vehicle and military applications. The device has an excellent large signal gain flatness performance, making it ideal for use in a wide range of applications. The device also provides a high power efficiency, which makes it well suited for high-efficiency applications.

The MRF6S23100HR5 is suitable for a wide range of applications, including wide-range RF amplifier, RF switching, RF power amplifiers, radio transceivers, and data communications. It is particularly well suited for wireless communications systems, such as wireless LAN, Bluetooth, WiMax, GPS, and Digital Broadcast TV. The device has been used in many commercial and industrial markets, such as automotive, medical, aerospace, industrial control, and defense.

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