MRF6S9130HR5

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The MRF6S9130HR5 is a LDMOS transistor developed by Monsanto Semiconductor. It is a RF power transistor that operates in the frequency range of 890-960MHz and is suitable for linear and narrow band applications such as Point to Point microwave, Cellular Infrastructure, and VSAT. It has a maximum output power of 90W and a drain efficiency of 42.0%.

The MRF6S9130HR5 is a N-Channel metal-oxide-semiconductor field-effect transistor (MOSFET). As a field-effect transistor, it is composed of a semiconductor material with a metal gate electrode. The metal gate forms a type of electrical switch that can control the flow of electrons from the source to the drain. The source is the input for the flow of electrons, and the drain is the output. By varying the amount of voltage in the gate electrode, the current from the source to the drain can be manipulated to achieve the desired power output.

The RF power transistor has a range of wide input voltage from 28V to 64V, allowing for a wide range of output power. This range of output power allows for various system designs, such as PCS base station transmitter, point-to-point microwave, and VSAT. Furthermore, the MRF6S9130HR5 features an improved thermal plastic encapsulation to reduce thermal resistance and better heat dissipation. This results in an improved thermal stability and increased RF power gain.

The MRF6S9130HR5 features several protections and safety mechanisms to ensure safe operation and ease of use. They include an overvoltage protection circuit that prevents the drain voltage from exceeding the specified limits, an output power limiter to avoid over current and excessive heat, and an integrated temperature sensor for automatic power control. The transistor also has a breakdown voltage of up to 25V and a junction temperature range of -40℃ to +150℃.

In conclusion, the MRF6S9130HR5 is an ideal power transistor for Point to Point microwave, Cellular Infrastructure, and VSAT applications. With its wide input voltage range, improved thermal plastic encapsulation, and several protection and safety mechanisms, it is a reliable and efficient RF power transistor for a variety of applications. Therefore, this device can be a useful addition to various RF transmitter systems.

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