MRF6S21190HR5

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	2.11GHz ~ 2.17GHz
Gain:	16dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.6A
Power - Output:	54W
Voltage - Rated:	68V
Package / Case:	NI-880
Supplier Device Package:	NI-880
Base Part Number:	MRF6S21190

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MRF6S21190HR5 application field and working principleBeing an N-Channel Enhancement Mode Field Effect Transistor (FET), the MRF6S21190HR5 RF device has many areas of application ranging from factory, to home and office use. This device is passive and gives users various connection options for its external circuit. It works by allowing only a small current to pass through when a voltage is applied across its gate, this voltage creates an electric field around the gate which in turn will trigger the flow of current through the device. ApplicationsThe MRF6S21190HR5 is capable of working at high frequencies and can, therefore, be used to power various kinds of high frequency devices, such as TV remote control signals, garage door openers, cordless phones and even Wi-Fi, Bluetooth and other short-range wireless signal applications. This device also has various applications in industrial settings, such as the medical imaging, radio frequency identification and radar industries.Features of the MRF6S21190HR5This device is a very efficient RF FET and has a NF= 3dB typical peak power index. It also has a rated power of 190W and a frequency range of 1.8GHz to 2.3GHz. This device also offers a -50 dBm OIP3, with a packaging technology of SOIC-8. The RF FET also has a current rating of 1.5A and a voltage of 28V.The Working PrincipleThe MRF6S21190HR5 works by creating a voltage drop across its gate due to an applied voltage. This voltage then creates and electric field around the gate, which in turn triggers the movement of electrons and the creation of electron holes. These electrons and electron holes are attracted to the gate, then create conduction pathways which allow current to flow through the device. This creates a certain conductivity level for the current as the applied voltage increases and eventually creates the desired current flow.Conclusion The MRF6S21190HR5 RF device is an effective N-Channel Enhancement Mode Field Effect Transistor and is suitable for a variety of applications, such as home and office use and industrial settings. It has a rated power of 190W and a frequency range of 1.8GHz to 2.3GHz. Furthermore, the device works by allowing only a small current to pass through when a voltage is applied across its gate. This voltage creates an electric field around the gate, which in turn will trigger the flow of current through the device.

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