MRF6V3090NBR1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Transistor Type:	LDMOS
Frequency:	860MHz
Gain:	22dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	350mA
Power - Output:	18W
Voltage - Rated:	110V
Package / Case:	TO-272BB
Supplier Device Package:	TO-272 WB-4
Base Part Number:	MRF6V3090

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MRF6V3090NBR1 is an enhancement-mode N-channel RF RF FET (radio frequency field effect transistor) that operates over the frequency range of 0.8 to 1000 MHz and is designed for use in applications requiring high linearity such as VHF, UHF, and wireless communications. It has an absolute power rating of 30 W and a transconductance of 70 mS @ VDS = 3 V, ID = 4 A.
The device is an ideal solution for high power, medium gain amplification in FM, ISM, and cellular applications such as amplifiers for handsets, power amplifiers for base stations, and repeaters. The device is constructed using advanced processing techniques with a double polysilicon gate process that allows for a higher power density with less power consumption. It also features built-in thermal protection with a positive temperature coefficient of RDS-ON, which ensures that the device\'s maximum power dissipation rating is not exceeded.
The working principle of the MRF6V3090NBR1 is based on its gate voltage. When the gate voltage is low, the MOSFET is off and the drain-source path is open. As the gate voltage increases, the drain-source current increase in a linear fashion. The gate voltage can be increased to a point where the drain-source resistance is saturated and the device will take on the characteristics of an amplifier, thus providing linear power gain.
The RF field effect transistor (RF FET) of the MRF6V3090NBR1 is a very efficient and powerful device, especially when used in medium gain amplification applications. It is capable of delivering 30 watts of power, while offering excellent linearity and low distortion across a frequency range of 0.8 to 1000 MHz. Additionally, it features thermal protection to keep it from overheating and failing in applications with high power output.

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