MRF6S19060MBR1 Allicdata Electronics
Allicdata Part #:

MRF6S19060MBR1-ND

Manufacturer Part#:

MRF6S19060MBR1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 68V 1.93GHZ TO272-4
More Detail: RF Mosfet LDMOS 28V 610mA 1.93GHz 16dB 12W TO-272 ...
DataSheet: MRF6S19060MBR1 datasheetMRF6S19060MBR1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 1.93GHz
Gain: 16dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 610mA
Power - Output: 12W
Voltage - Rated: 68V
Package / Case: TO-272-4
Supplier Device Package: TO-272 WB-4
Base Part Number: MRF6S19060
Description

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The MRF6S19060MBR1 is a unique, high-efficiency and wideband phase shifter which utilizes a radio frequency field-effect transistor (RF FET) to control electromagnetic energy. It consists of two RF transistors, a metallized Z-axis winding, a series inductor and capacitor, and three bi-directional connecting pins for an efficient and reliable RF transmission. This phase shifter utilizes low-voltage DC bias (less than 5 volts) to control the current level passing through the FET, and its high performance ensures excellent phase shifting capability up to 4 GHz.

This phase shifter is designed for applications which require accurate, repeatable and precise phase shifts. Wireless networks, base station circuits, telecommunication systems, antenna arrays and transmitters are some of the areas in which this component is widely used. Its RF performance and low input drive allow for very precise control over the phase shift of electromagnetic energy.

The MRF6S19060MBR1 is an excellent choice for applications where precise control of phase shift is needed. Its surface mount design ensures its compatibility with both legacy and newer designs and its wide frequency band makes it suitable for a variety of applications. It is widely used in medical equipment, fiber-optic communication systems, RF transmitters and receivers, aerospace and military communication systems, satellite systems and radar.

The working principle of the MRF6S19060MBR1 is based on the radio frequency field-effect transistor (RF FET). The RF FET is used to vary the current level to the phase shifting component, which alters the phase shift of electromagnetic energy. The capacitors and inductors in the component are used to ensure accuracy and repeatability of the phase shift. The component is designed to accept a DC bias, which controls the current level of the FET. By controlling the current level of the FET, the phase shift of the energy is accurately determined. The DC bias also controls the speed of the phase shift settling.

The MRF6S19060MBR1 is a reliable, high-performance and efficient RF FET based phase shifter. It offers precise control over the phase shift of electromagnetic energy and its wide frequency band ensures its compatibility with a variety of systems. Its surface mount design ensures its compatibility with legacy and newer designs and its low voltage operation provides superior power efficiency. This component is widely used in a variety of applications, including wireless communications, fiber-optic communications, RF transmitters and receivers, aerospace and military communications, satellite systems and radar.

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