MRF6S21140HSR5

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MRF6S21140HSR5 is an advanced radio frequency (RF) power Field-Effect Transistor (FET) packaged in a heavy copper, surface mount, plastic package. This FET has high linearity, excellent thermal resistance and superior high power capabilities.
MRF6S21140HSR5 is particularly suited for new and innovative applications such as Digital TV Transmitter Power Amplifiers, RF transmitters, cellular radios, high power Wi-Fi, Medical Imaging, high power switch mode power supplies, automotive ignition systems and other high power RF applications.
The MRF6S21140HSR5 is a silicon monolithic integrated circuit designed for use in a variety of high power amplifiers and switch mode power supplies. This device utilizes a self-biased technology and features a dual-gate MOSFET structure. This device delivers high power density, efficiency, and low distortion while providing excellent thermal resistance. The device is designed to handle up to1800V, allowing it to be used in high voltage applications.
The horizontal geometry of the device utilizes a high drain-source capacitance that reduces the non-linearities and therefore enhances the linearity and efficiency at higher RF out powers. The device exhibits robustness under harsh environmental conditions making it suitable for use in demanding applications such as high power Digital TV Transmitters and Ignition systems.
The MRF6S21140HSR5 operates in a drain current range from 0.3A to 5.5A. The device has a gate to drain breakdown voltage from 2.2V to 8.2V. The device has a gate to drain leakage current of 0.1uA or less. The device is configured for low gate charge and high gate input capacity, allowing for a wide range of frequencies and superior linearity.
The MRF6S21140HSR5 features an advanced process optimized for high performance. The FET utilizes a passivated surface structure and a low-temperature polysilicon self-aligned gate structure. This combination increases the power density of the device while providing superior thermal resistance. Also, this device features Silvaco’s advanced source-bonding technology allowing it to be driven by higher source waveforms without generating high electric fields that can cause damage to the gate oxide layer. This innovative technology helps to extend the life of the device in high power applications.
To summarize, the MRF6S21140HSR5 is an advanced radio frequency power MOSFET with superior linearity, excellent thermal resistance and superior high power capabilities. This device can be used in a variety of applications such as Digital TV Transmitter Power Amplifiers, RF transmitters, cellular radios, high power Wi-Fi, Medical imaging, automotive ignition systems and other high power RF applications.

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