MRF6S27085HSR5

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The MRF6S27085HSR5 is an RF silicon device designed to compete with GaAs-based devices in the realm of high-power industrial and commercial applications where cost and performance are factors. As an enhancement-mode MOSFET, it is rated for 13.5 watts of output power and complies with MIL-STD-202F requirements for present and future applications.

Application Field

The MRF6S27085HSR5 is suitable for use in a wide range of RF applications, ranging from 800 MHz to 4 GHz frequencies, including cellular phones, WLANs and other wireless systems. It is a popular choice for radio transmitter and amplifier applications that demand high power, high linearity and low distortion. The device is also suitable for applications such as Industrial and Automotive telematics, High Efficiency Embedded Transmitter, Low Noise Amplifier and Mixer, Multi-Band Low Noise Amplifier and Microwave Point-to-Point Transmitter, for which it offers great performance.

Working Principle

The working principle of the MRF6S27085HSR5 is similar to that of any other enhancement-mode MOSFET. The principal components are a drain, source, and gate terminals. A MOSFET’s current carrying capacity is controlled by bias voltage applied to the gate. Higher gate voltage will result in higher drain current, while lower gate voltage will reduce it. In this way, the drain current can be regulated, thus allowing the device to be used as an amplifier. The MRF6S27085HSR5 is designed to handle up to 13.5 watt of output power, while still maintaining excellent linearity and low distortion.

In addition to the principle of operation, the MRF6S27085HSR5 also has a number of important features. It is rated for up to 800 volts of blocking voltage with a power dissipation rating of 8 watts. The device is also highly temperature stable, with a maximum junction temperature as high as 150 degrees Celsius. The device is also tolerance to temperature peaks and exhibit excellent linearity in its operation.

The MRF6S27085HSR5 is an excellent choice for a wide range of RF applications. It is cost effective, offers excellent linearity and low distortion, and is compliant with MIL-STD-202F requirements.

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