MRF6V12250HR3

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MRF6V12250HR3, a high-frequency transistor with a low-noise and high-power-gain from the series of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) from NXP Semiconductors, is widely used for RF (radio frequency) applications due to its ability to efficiently boost signal power output and low-noise performance. This N-channel MOSFET is designed to enhance high-frequency operations, with its most efficient operation same at frequencies near 1GHz, at maximum power gain of approximately 13dB.

As an N-Channel MOSFET, the MRF6V12250HR3 is built with a voltage resistance from the drain to the source between -25V to -35V, and its RDSon, or Drain-Source On state resistance, is about 0.03Ω. Its relatively low maximum gate threshold voltage ranging between -3.5V to -5V, renders it ideal for radio frequency amplifier applications.

MRF6V12250HR3’s applications are mainly utilized in the operation of radio transmitters. For example, in cellular base station applications, its high-gain performance and speed of operation are perfect for efficient transmission capabilities. Also, its superior power handling and efficiency make it perfect for high-voltage operation in radio antennas and other radio transmission systems.

MRF6V12250HR3 transistors function in a source-follower arrangement. This mode allows for the addition of an external load that the transistor can then drive. For example, a power amplifier is often connected to the output of the transistor in order to create a gain block or buffer. In this arrangement, the gate current from the gate terminal flows into the drains, creating a voltage drop and therefore a change of voltage between the source and the drain. This then allows the power applied to the drain load to be adjusted based on the pull of the gate current in the MOSFET.

The MRF6V12250HR3 is equipped with a maximum drain-source breakdown voltage rating of ±25V, with a gate-source breakdown voltage rating of ±5V. It has an on-state resistance of 0.03Ω maximum, and a gate-source capacitance of 50pF maximum. Its gate-drain capacitance is 1.5pF maximum, with a gate-drain leakage current of ±0.1mA maximum. It has a maximum power rating of 435mW, with a maximum operating temperature of 105ºC and a thermal resistance rating of 13ºC/W.

The MRF6V12250HR3 is compatible with many Radio Frequency development boards, or RFBs, and is ideal for applications with a wide variety of requirements. Its low-noise and high-power-gain make it an excellent solution for high-frequency operations. Thanks to its on-state resistance, gate threshold voltage, and breakdown voltage ratings, designers are ensured that the MRF6V12250HR3 is a reliable and efficient choice for their RF amplifier applications.

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