Allicdata Part #: | MRF6V12500HR3-ND |
Manufacturer Part#: |
MRF6V12500HR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 110V 1.03GHZ NI-780H |
More Detail: | RF Mosfet LDMOS 50V 200mA 1.03GHz 19.7dB 500W NI-7... |
DataSheet: | MRF6V12500HR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | LDMOS |
Frequency: | 1.03GHz |
Gain: | 19.7dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 200mA |
Power - Output: | 500W |
Voltage - Rated: | 110V |
Package / Case: | NI-780 |
Supplier Device Package: | NI-780 |
Base Part Number: | MRF6V12500 |
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The MRF6V12500HR3 is an RF MOSFET created by Freescale Semiconductor that operates in the 900 MHz frequency range. The device was designed specifically to meet the needs of wireless access infrastructure, digital terrestrial TV transmissions, and other related applications such as public protection and disaster relief (PPDR) radios.The MRF6V12500HR3 is a power MOSFET developed for use in a variety of wireless communications applications. The device is a high power, high frequency, and high thermal performance device with low gate charge and low total gate charge (from gate to source). The device features an embedded RF shield that provides an optimized source gate resistance and an improved source-drain thermal path for improved thermal cycling and operation.The MRF6V12500HR3 operates in the 900 MHz frequency range and was designed to meet performance requirements for wireless access infrastructure applications, digital terrestrial TV transmissions, and other related applications. The device\'s high power capability enables the delivery of up to 500 watts of power in the 21 to 27 MHz frequency range. The device is also capable of operating efficiently in the 2.4 GHz frequency range.The MRF6V12500HR3 is a three-terminal device, consisting of a gate, source, and drain. The gate controls the current flow between the source and drain, which are connected to the ground. The drain voltage is typically equal to the power supply voltage, while the gate voltage is equal to the voltage of the input signal. The device can be used in either an N-channel or P-channel configuration, depending on the application requirement.The device is also capable of operating in saturation and enhancement modes. In saturation mode, the source-drain current is controlled by the gate-source voltage, whereas in enhancement mode the drain current is controlled by the gate-source voltage. The device is typically operated in enhancement mode for best performance.The device features low on-resistance and gate charge, which results in high efficiency and low power consumption when the device is operated in switching mode. The device\'s protection features such as thermal shutdown and current limiting protect the device from excessive power consumption and over temperatures.The device is also designed to be easy to use and is robust enough to withstand hostile environments. The device is RoHS compliant and is designed to meet MIL-STD-750 requirements.
The specific data is subject to PDF, and the above content is for reference
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