MRF6V12500HSR3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Transistor Type:	LDMOS
Frequency:	1.03GHz
Gain:	19.7dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	200mA
Power - Output:	500W
Voltage - Rated:	110V
Package / Case:	NI-780S
Supplier Device Package:	NI-780S
Base Part Number:	MRF6V12500

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The MRF6V12500HSR3 is a modern transistor designed for radio frequency (RF) operation in power amplifier applications up to 3 GHz. This device utilizes a Multi-Emitter Structure field-effect technology (MESFET) and is manufactured using the latest GaAs Molecular Beam Epitaxy (MBE) process. Its unique design, which includes an internal bias circuit, provides excellent gain and linearity characteristics over its entire operating range. The device is well suited for devices requiring high power amplification such as Base Stations and VSAT systems.

Features

The MRF6V12500HSR3 has a wide range of features that make it an attractive product for RF power amplifier applications. These include:

• Low Noise and Low IMD3 (3rd order Intermodulation Distortion)
• High Gain and High Efficiency
• High Power Output (up to 500 Watts)
• Wide Frequency Range (0.7 – 3 GHz)
• Wide Supply Voltage (3.3 – 15 V)
• Low Drain Capacitance (< 0.2 pF)

Applications

The MRF6V12500HSR3 is ideal for RF power amplifier applications such as base stations and VSAT systems. It is also used in Wi-Fi and cellular networks, broadband communication systems and high power industrial & scientific applications.

Working Principle

The MRF6V12500HSR3 utilizes a Multi-Emitter Structure Field Effect Transistor (MESFET) design. This device consists of four active gate regions, each gate being connected to an individual dual-side metallized gate electrode. The gate electrodes provide the control signal for the FET and provide a stable bias current flow from drain to source. The gate electrodes also form an inductive network, which provides stability to the amplifier design and ensures a high dynamic range.The device operates in a zero-voltage threshold region, which provides high speed operation but also wide bandwidth due to the low source-drain capacitance of the MESFET. The high gain and linearity provided by the MESFET design yields high efficiency in power amplifier applications. Furthermore, the device has very low IMD3 distortion as a result of its improved matching network.In conclusion, the MRF6V12500HSR3 is an excellent choice for RF power amplifier applications. With its wide frequency range, low noise, high gain, and excellent efficiency, it provides a highly reliable solution for any application requiring high RF power.

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