MRF6V2010NR1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	220MHz
Gain:	23.9dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	30mA
Power - Output:	10W
Voltage - Rated:	110V
Package / Case:	TO-270AA
Supplier Device Package:	TO-270-2
Base Part Number:	MRF6V2010

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MRF6V2010NR1 is a laterally diffused metal-oxide-semiconductor field-effect transistor (MOSFET). With a metal gate and an oxide layer between the gates and channel, the device is essentially impervious to electrostatic damage. This makes it ideal for use in high frequency, high voltage applications.The MOSFET was introduced to provide a higher switching speed and higher cut-off frequency than what can be achieved with a bipolar junction transistor (BJT). In addition, the MOSFET has a low on-resistance which makes it easier to drive large currents with low power dissipation. The MOSFET is primarily used in switching applications, such as radio frequency (RF) amplifiers, DC-DC converters, as well as power control circuits.The MOSFET is also well suited to RF-related applications. RF circuits require devices that are able to switch quickly and inherently have low distortion. The on-resistance of the MOSFET helps to reduce distortion and minimises power dissipation. Due to its low capacitance and high gain, the MOSFET is also well suited for use in voltage-controlled oscillators.In terms of its working principles, the MOSFET works by having a gate voltage that is proportional to the drain current. The gate-source voltage (VGS) will determine the threshold voltage (VTH) which will determine the drain current (ID) when it is exceeded. The drain current is then dependent on the drain-source voltage (VDS) - the higher the VDS, the higher the ID.When the MOSFET is used in an analog circuit, the device becomes an amplifier. The MOSFET acts as a variable resistance by changing its VGS, which in turn allows more or less current to flow. When used in a switching circuit, the device will change its resistance and allow current to flow, or not, depending on the gate voltage.The MRF6V2010NR1 is specifically designed for radio frequency applications. It has a wide operating temperature range of -55° to 150°C, and a maximum drain-source voltage of 100V. The maximum drain current is 50A and its maximum gain is 35dB.In conclusion, the MRF6V2010NR1 is a MOSFET designed for use in switching and RF applications. It is a device with a low on-resistance, low capacitance, high gain and wide operating temperature, making it an ideal choice for high frequency, high voltage applications.

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